TLP184(GR,SE

TLP184(SE
1
Photocouplers GaAs Infrared LED & Photo Transistor
TLP184(SE
TLP184(SE
TLP184(SE
TLP184(SE
Start of commercial production
2013-01
1.
1.
1.
1. Applications
Applications
Applications
Applications
Programmable Logic Controllers (PLCs)
Private Branch Exchanges (PBXs)
2.
2.
2.
2. General
General
General
General
The TLP184(SE is a AC input type photocoupler that consist of a photo transistor optically coupled to two gallium
arsenide infrared emitting diodes.
The TLP184(SE is housed in the very small and thin SO6 package, it has a high noise immunity and a high
isolation voltage.
Since the TLP184(SE is smaller than DIP package, it's suitable for high-density surface mounting application
such as Hybrid ICs.
3.
3.
3.
3. Features
Features
Features
Features
(1) Collector-emitter voltage: 80 V (min)
(2) Current transfer ratio: 50% (min)
Rank GB: 100% (min)
(3) Isolation voltage: 3750 Vrms (min)
(4) Operating temperature: -55 to 110
(5) Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5 (Note 1)
(Note 1)
(Note 1)
(Note 1)
CQC-approved: GB4943.1, GB8898 Thailand Factory
Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (V4)
Option (V4)
Option (V4)
Option (V4).
4.
4.
4.
4. Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
Packaging and Pin Assignment
11-4M1S
1: Anode, Cathode
3: Cathode, Anode
4: Emitter
6: Collector
2015-11-02
Rev.4.0
©2015 Toshiba Corporation
TLP184(SE
2
5.
5.
5.
5. Principle of Operation
Principle of Operation
Principle of Operation
Principle of Operation
5.1.
5.1.
5.1.
5.1. Mechanical Parameters
Mechanical Parameters
Mechanical Parameters
Mechanical Parameters
Characteristics
Creepage distances
Clearance
Internal isolation thickness
Min
5.0
5.0
0.4
Unit
mm
6.
6.
6.
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
LED
Detector
Common
Characteristics
R.M.S. forward current
Input forward current derating
Input forward current (pulsed)
Input power dissipation
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Collector power dissipation
derating
Junction temperature
Operating temperature
Storage temperature
Lead soldering temperature
Total power dissipation
Input power dissipation
derating
Isolation voltage
(T
a
90 )
(T
a
25 )
(10 s)
(T
a
25 )
AC, 60 s, R.H. 60%
Symbol
I
F(RMS)
I
F
/T
a
I
FP
P
D
T
j
V
CEO
V
ECO
I
C
P
C
P
C
/T
a
T
j
T
opr
T
stg
T
sol
P
T
P
D
/T
a
BV
S
Note
(Note 1)
(Note 2)
Rating
±50
-1.5
±1
100
125
80
7
50
150
-1.5
125
-55 to 110
-55 to 125
260
200
-2.0
3750
Unit
mA
mA/
A
mW
V
V
mA
mW
mW/
mW
mW/
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) 100 µs, f = 100 Hz
Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
7.
7.
7.
7. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
LED
Detector
Characteristics
Input forward voltage
Input capacitance
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Dark Current
Collector-emitter capacitance
Symbol
V
F
C
t
V
(BR)CEO
V
(BR)ECO
I
DARK
C
CE
Note Test Condition
I
F
= ±10 mA
V = 0 V, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V
V
CE
= 48 V, T
a
= 85
V = 0 V, f = 1 MHz
Min
1.1
80
7
Typ.
1.25
60
0.01
2
10
Max
1.4
0.08
50
Unit
V
pF
V
V
µA
µA
pF
2015-11-02
Rev.4.0
©2015 Toshiba Corporation
TLP184(SE
3
8.
8.
8.
8. Coupled Electrical Characteristics (Unless otherwise specified, T
Coupled Electrical Characteristics (Unless otherwise specified, T
Coupled Electrical Characteristics (Unless otherwise specified, T
Coupled Electrical Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Current transfer ratio
Saturated current transfer ratio
Collector-emitter saturation
voltage
OFF-state collector current
Collector current ratio
Symbol
I
C
/I
F
I
C
/I
F(sat)
V
CE(sat)
I
C(off)
I
C
(ratio)
Note
(Note 1)
Test Condition
I
F
= ±5 mA, V
CE
= 5 V
I
F
= ±5 mA, V
CE
= 5 V, Rank GB
I
F
= ±1 mA, V
CE
= 0.4 V
I
F
= ±1 mA, V
CE
= 0.4 V, Rank GB
I
C
= 2.4 mA, I
F
= ±8 mA
I
C
= 0.2 mA, I
F
= ±1 mA
I
C
= 0.2 mA, I
F
= ±1 mA, Rank GB
V
F
= ±0.7 V, V
CE
= 48 V
See Fig. 8.1
I
C
(I
F
= -5 mA) / I
C
(I
F
= 5 mA)
Min
50
100
30
0.33
Typ.
60
0.2
1
1
Max
600
600
0.3
0.3
10
3
Unit
%
V
µA
Note 1: See Table 8.1 for current transfer ratio.
Table
Table
Table
Table 8.1
8.1
8.1
8.1 Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, T
Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, T
Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, T
Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Rank
Blank
Y
GR
GB
BL
Test Condition
I
F
= ±5 mA, V
CE
= 5 V
Current
transfer ratio
I
C
/I
F
Min
50
50
100
100
200
Current
transfer ratio
I
C
/I
F
Max
600
150
300
600
600
Marking of
Classification
Blank, YE, GR, GB,
BL
YE
GR
GB
BL
Unit
%
Note: Specify both the part number and a rank in this format when ordering.
Example: TLP184(GB,SE
For safety standard certification, however, specify the part number alone.
Example: TLP184(GB,SE: TLP184
Fig.
Fig.
Fig.
Fig. 8.1
8.1
8.1
8.1 Collector Current Ratio Test Circuit
Collector Current Ratio Test Circuit
Collector Current Ratio Test Circuit
Collector Current Ratio Test Circuit
9.
9.
9.
9. Isolation Characteristics (Unless otherwise specified, T
Isolation Characteristics (Unless otherwise specified, T
Isolation Characteristics (Unless otherwise specified, T
Isolation Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Total capacitance (input to
output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
(Note 1)
(Note 1)
(Note 1)
Test Condition
V
S
= 0 V, f = 1 MHz
V
S
= 500 V, R.H. 60 %
AC, 60 s
AC, 1 s in oil
DC, 60 s in oil
Min
1 × 10
12
3750
Typ.
0.8
10
14
10000
10000
Max
Unit
pF
Vrms
Vdc
Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
2015-11-02
Rev.4.0
©2015 Toshiba Corporation

TLP184(GR,SE

Mfr. #:
Manufacturer:
Toshiba
Description:
Transistor Output Optocouplers 50mA Photocoupler 80V 50mA 3750Vrms
Lifecycle:
New from this manufacturer.
Delivery:
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