BAT54WS
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 14-Oct-16
1
Document Number: 85667
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Pulse test; t
p
300 μs, < 2 %
PARTS TABLE
PART ORDERING CODE
INTERNAL
CONSTRUCTION
TYPE MARKING REMARKS
BAT54WS
BAT54WS-E3-08 or BAT54WS-E3-18
Single diode L4 Tape and reel
BAT54WS-HE3-08 or BAT54WS-HE3-18
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
RRM
30 V
Forward continuous current
(1)
I
F
200 mA
Repetitive peak forward current
(1)
I
FRM
300 mA
Surge forward current
(1)
t
p
< 1 s I
FSM
600 mA
Power dissipation
(1)
P
tot
150 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
650 K/W
Maximum junction temperature T
j
125 °C
Storage temperature range T
stg
-65 to +150 °C
Operating temperature range T
op
-55 to +125 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage Tested with 100 μA pulses V
(BR)
30 V
Leakage current
(1)
V
R
= 25 V I
R
2μA
Forward voltage
(1)
I
F
= 0.1 mA V
F
240 mV
I
F
= 1 mA V
F
320 mV
I
F
= 10 mA V
F
400 mV
I
F
= 30 mA V
F
500 mV
I
F
= 100 mA V
F
800 mV
Diode capacitance V
R
= 1 V, f = 1 MHz C
D
10 pF
Reserve recovery time
I
F
= 10 mA, I
R
= 10 mA,
i
R
= 1 mA, R
L
= 100
t
rr
5ns
