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CGD1046HI,112

P1-P3P4-P6P7-P8
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V
Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
1.2 Features and benefits
Excellent linearity
Superior levels of ESD protection
Extremely low noise
Excellent return loss properties
Gain compensation over temperature
Rugged construction
Unconditionally stable
Thermally optimized design
Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain
Hazardous Substances (RoHS)
Integrated ring wave surge protection
1.3 Applications
CATV systems operating in the 40 MHz to 1003 MHz frequency range
1.4 Quick reference data
[1] 79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (−6 dB offset);
tilt extrapolated to 13.5 dB at 1003 MHz.
[2] Direct Current (DC).
CGD1046HI
1 GHz, 27 dB gain GaAs high output power doubler
Rev. 1 — 30 July 2010 Product data sheet
Table 1. Quick reference data
Bandwidth 40 MHz to 1003 MHz; V
B
= 24 V (DC); Z
S
= Z
L
= 75
Ω
; T
mb
=35
°
C; unless otherwise
specified.
Symbol Parameter Conditions Min Typ Max Unit
G
p
power gain f = 45 MHz - 25.5 - dB
f = 1003 MHz 26.5 27 28 dB
CTB composite triple beat V
o
= 56.4 dBmV at 1003 MHz
[1]
- −75 −65 dBc
CCN carrier-to-composite noise V
o
= 56.4 dBmV at 1003 MHz
[1]
57 63 - dBc
I
tot
total current
[2]
- 450 465 mA
CGD1046HI All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 30 July 2010 2 of 8
NXP Semiconductors
CGD1046HI
1 GHz, 27 dB gain GaAs high output power doubler
2. Pinning information
3. Ordering information
4. Limiting values
[1] The ESD pulse of 2000 V corresponds to a class 2 sensitivity level.
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 input
2, 3 common
5+V
B
7, 8 common
9output
91357
2378
5
91
sym09
5
Table 3. Ordering information
Type number Package
Name Description Version
CGD1046HI - rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2 × 6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
B
supply voltage - 30 V
V
i(RF)
RF input voltage single tone - 75 dBmV
V
ESD
electrostatic discharge voltage Human Body Model (HBM);
According JEDEC standard
22-A114E
[1]
- 2000 V
Biased; According
IEC61000-4-2
- 1500 V
T
stg
storage temperature −40 +100 °C
T
mb
mounting base temperature −20 +100 °C
CGD1046HI All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 30 July 2010 3 of 8
NXP Semiconductors
CGD1046HI
1 GHz, 27 dB gain GaAs high output power doubler
5. Characteristics
[1] G
p
at 1003 MHz minus G
p
at 45 MHz.
[2] Flatness is defined as peak deviation to straight line.
[3] Direct Current (DC).
[4] 79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (−6 dB offset); tilt extrapolated to 13.5 dB
at 1003 MHz.
[5] 79 NTSC channels [f = 54 MHz to 550 MHz]; tilt extrapolated to 13.5 dB at 1003 MHz.
Table 5. Characteristics
Bandwidth 40 MHz to 1003 MHz; V
B
= 24 V (DC); Z
S
= Z
L
= 75
Ω
; T
mb
=35
°
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
G
p
power gain f = 45 MHz - 25.5 - dB
f = 1003 MHz 26.5 27 28 dB
SL
sl
slope straight line f = 45 MHz to 1003 MHz
[1]
0.7 - 2.2 dB
FL flatness of frequency response f = 45 MHz to 1003 MHz
[2]
-- 1dB
RL
in
input return loss f = 45 MHz to 160 MHz 20 - - dB
f = 160 MHz to 320 MHz 19 - - dB
f = 320 MHz to 640 MHz 18 - - dB
f = 640 MHz to 870 MHz 17 - - dB
f = 870 MHz to 1003 MHz 16 - - dB
RL
out
output return loss f = 45 MHz to 160 MHz 20 - - dB
f = 160 MHz to 320 MHz 18 - - dB
f = 320 MHz to 640 MHz 17 - - dB
f = 640 MHz to 870 MHz 16 - - dB
f = 870 MHz to 1003 MHz 16 - - dB
NF noise figure f = 50 MHz - 4.5 5.5 dB
f = 1003 MHz - 5 6 dB
I
tot
total current
[3]
-450465mA
79 NTSC channels + 75 digital channels
CTB composite triple beat V
o
= 56.4 dBmV at 1003 MHz
[4]
- −75 −65 dBc
CSO composite second-order distortion V
o
= 56.4 dBmV at 1003 MHz
[4]
- −70 −63 dBc
Xmod cross modulation V
o
= 56.4 dBmV at 1003 MHz
[4]
- −68 - dB
CCN carrier-to-composite noise V
o
= 56.4 dBmV at 1003 MHz
[4]
57 63 - dBc
79 NTSC channels
CTB composite triple beat V
o
= 58.4 dBmV at 1003 MHz
[5]
- −70 - dBc
CSO composite second-order distortion V
o
= 58.4 dBmV at 1003 MHz
[5]
- −67 - dBc
Xmod cross modulation V
o
= 58.4 dBmV at 1003 MHz
[5]
- −64 - dB
P1-P3P4-P6P7-P8

CGD1046HI,112

Mfr. #:
Buy CGD1046HI,112
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier 1CH 4.5dB 24V 450mA
Lifecycle:
New from this manufacturer.
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