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IRAMX30TP60A

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
IRAMX30TP60A
4 www.irf.com
Inverter Section Switching Characteristics
Symbol Parameter Min Typ Max Units Conditions
E
ON
Turn-On Switching Loss --- 585 ---
E
OFF
Turn-Off Switching Loss --- 185 ---
E
TOT
Total Switching Loss --- 770 ---
E
REC
Diode Reverse Recovery energy --- 20 ---
t
RR
Diode Reverse Recovery time --- 130 --- ns
E
ON
Turn-on Switching Loss --- 780 ---
E
OFF
Turn-off Switching Loss --- 310 ---
E
TOT
Total Switching Loss --- 1090 ---
E
REC
Diode Reverse Recovery energy --- 25 ---
t
RR
Diode Reverse Recovery time --- 125 --- ns
Q
G
Turn-On IGBT Gate Charge --- 50 75 nC
I
C
=24A, V
+
=400V, V
GE
=15V
RBSOA Reverse Bias Safe Operating Area
T
J
=150°C, I
C
=12.5A, V
P
=600V
V
+
= 450V,
V
CC
=+15V to 0V See CT3
SCSOA Short Circuit Safe Operating Area 5 --- --- μs
T
J
=25°C, V
+
= 400V,
V
GE
=+15V to 0V
FULL SQUARE
V
BIAS
(V
CC
, V
BS1,2,3
)=15V, T
J
=25ºC, unless otherwise specified.
μJ
I
C
=12.5A, V
+
=400V
V
CC
=15V, L=1.2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
μJ
I
C
=12.5A, V
+
=400V
V
CC
=15V, L=1.2mH, T
J
=150°C
Energy losses include "tail" and
diode reverse recovery
See CT1
Recommended Operating Conditions Driver Function
Symbol Definition Min Typ Max Units
V
B1,2,3
High side floating supply voltage V
S
+12.5 V
S
+15 V
S
+17.5 V
V
S1,2,3
High side floating supply offset voltage Note 4 --- 450 V
V
CC
Low side and logic fixed supply voltage 13.5 15 16.5 V
V
T/ITRIP
T/I
TRIP
input voltage V
SS
--- V
SS
+5 V
V
IN
Logic input voltage LIN, HIN V
SS
--- V
SS
+5 V
HIN High side PWM pulse width 1 --- --- μs
Deadtime External dead time between HIN and LIN 1 --- --- μs
Note 3: For more details, see IR21365 data sheet
Note 4: Logic operational for V
s
from COM-5V to COM+600V. Logic state held for V
s
from COM-5V to COM-V
BS
.
(please refer to DT97-3 for more details)
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The V
S
offset is tested with all supplies biased
at 15V differential
(
Note 3
)
IRAMX30TP60A
www.irf.com 5
Static Electrical Characteristics Driver Function
Symbol Definition Min Typ Max Units
V
IN,th+
Positive going input threshold for LIN, HIN 3.0 --- --- V
V
IN,th-
Negative going input threshold for LIN, HIN --- --- 0.8 V
V
CCUV+,
V
BSUV+
V
CC
/V
BS
supply undervoltage, Positive going threshold 10.6 11.1 11.6 V
V
CCUV- ,
V
BSUV-
V
CC
/V
BS
supply undervoltage, Negative going threshold 10.4 10.9 11.4 V
V
CCUVH,
V
BSUVH
V
CC
and V
BS
supply undervoltage lock-out hysteresis --- 0.2 --- V
I
QBS
Quiescent V
BS
supply current --- --- 120 μA
I
QCC
Quiescent V
CC
supply current --- --- 2.3 mA
I
LK
Offset Supply Leakage Current --- --- 50 μA
I
IN+
Input bias current (OUT=LO) --- 100 220 μA
I
IN-
Input bias current (OUT=HI) -1 200 300 μA
V(T/I
TRIP
)I
TRIP
threshold Voltage 3.85 4.3 4.75 V
V(T/I
Trip,
HYS) I
TRIP
Input Hysteresis --- 0.15 --- V
V
BIAS
(V
CC
, V
BS1,2,3
)=15V, T
J
=25ºC, unless otherwise specified. The V
IN
and I
IN
parameters are referenced to COM and
are applicable to all six channels. (Note 3)
Dynamic Electrical Characteristics
Symbol Parameter Min Typ Max Units Conditions
T
ON
Input to Output propagation turn-on
delay time (see fig.11)
--- 650 --- ns
T
OFF
Input to Output propagation turn-off
delay time (see fig. 11)
--- 700 --- ns
T
FILIN
Input filter time (HIN,LIN) --- 200 --- μs
V
IN
=0 or V
IN
=5V
T
BLT-ITRIP
I
TRIP
Blanking Time
--- 150 --- ns
V
IN
=0 or V
IN
=5V, V
ITRIP
=5V
T
ITRIP
I
TRIP
to six switch turn-off
propagation delay (see fig. 2)
--- --- 1.75 μs
I
C
=12.5A, V
+
=300V
D
T
Internal Dead Time injected by
driver
220 290 360 ns
V
IN
=0 or V
IN
=5V
M
T
Matching Propagation Delay Time
(On & Off) all channels
--- 40 75 ns External dead time> 400ns
--- 7.7 ---
T
C
= 25°C
--- 6.7 ---
T
C
= 100°C
V
BIAS
(V
CC
, V
BS1,2,3
)=15V, T
J
=25ºC, unless otherwise specified. Driver only timing unless otherwise specified.
T
FLT-CLR
Post I
TRIP
to six switch turn-off clear
time (see fig. 2)
ms
I
C
=12.5A, V
+
=300V
IRAMX30TP60A
6 www.irf.com
Thermal and Mechanical Characteristics
Symbol Parameter Min Typ Max Units Conditions
R
th(J-C)
Thermal resistance, per IGBT ---
2.4
3.0
R
th(J-C)
Thermal resistance, per Diode ---
3.7
5.0
R
th(C-S)
Thermal resistance, C-S ---
0.1 ---
CTI Comparative Tracking Index 600
--- ---
V
BKCurve Curvature of module backside 0
--- ---
NjP Convex only
°C/W
Inverter Operating Condition
Flat, greased surface. Heatsink
compound thermal conductivity
1W/mK
Internal NTC - Thermistor Characteristics
Parameter Definition Min Typ Max Units Conditions
R
25
Resistance 97 100 103 Nƻ T
C
= 25°C
R
125
Resistance 2.25 2.52 2.80 Nƻ T
C
= 125°C
B B-constant (25-50°C) 4165 4250 4335 k R
2
= R
1
e
[B(1/T2 - 1/T1)]
Temperature Range -40 --- 125 °C
Typ. Dissipation constant --- 1 --- mW/°C
T
C
= 25°C
R
T
Resistance --- 12 --- Nƻ T
C
=25°C
Ʃ5
T
/R
T
Resistor Tolerance --- --- ±1 % T
C
=25°C
Input-Output Logic Level Table
I
TRIP
HIN1,2,3 LIN1,2,3 U,V,W
001V+
0100
011Off
000Off
1XXOff
Ho
Lo
U,V,W
IC
Driver
V
+
Hin1,2,3
Lin1,2,3
(15,16,17)
(18,19,20)
(8,5,2)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

IRAMX30TP60A

Mfr. #:
Buy IRAMX30TP60A
Manufacturer:
Infineon / IR
Description:
Motor / Motion / Ignition Controllers & Drivers 30A 600V Intg Pwr Hybrid IC
Lifecycle:
New from this manufacturer.
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