1/10March 2005
STP12PF06
STF12PF06
P-CHANNEL 60V - 0.18 Ω - 12A TO-220/TO-220FP
STripFET™ II POWER MOSFET
Rev. 2.0
Figure 1:PackageTable 1: General Features
■ TYPICAL R
DS
(on) = 0.18 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE
■ APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility
APPLICATIONS
■ MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
TYPE
V
DSS
R
DS(on)
I
D
STP12PF06
STF12PF06
60 V
60 V
< 0.20 Ω
< 0.20 Ω
12 A
12 A
2
2
TO-220 TO-220FP
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
Table 3: ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area.
NOTE
:For the P-CHANNEL MOSFET actual polarity of voltages
and current has to be reversed.
(1) I
SD
≤12A, di/dt ≤200A/µs, V
DD
≤ V
(BR)DSS
, T
j
≤ T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 12A, V
DD
= 25V
PART NUMBER MARKING PACKAGE PACKAGING
STP12PF06
STF12PF06
P12PF06
F12PF06
TO-220
TO-220FP
TUBE
TUBE
Symbol Parameter Value Unit
STP20PF06 STF20PF06
V
DS
Drain-source Voltage (V
GS
= 0)
60 V
V
DGR
Drain-gate Voltage (R
GS
= 20 kΩ)
60 V
V
GS
Gate- source Voltage ± 20 V
I
D
Drain Current (continuous) at T
C
= 25°C
12 8 A
I
D
Drain Current (continuous) at T
C
= 100°C
8.4 5.6 A
I
DM
(•)
Drain Current (pulsed) 48 32 A
P
tot
Total Dissipation at T
C
= 25°C
60 225 W
Derating Factor 0.4 0.17 W/°C
dv/dt
(1)
Peak Diode Recovery voltage slope 6 V/ns
E
AS
(2)
Single Pulse Avalanche Energy 200 mJ
T
stg
Storage Temperature
-55 to 175 °C
T
j
Operating Junction Temperature
