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SI7850DP-T1-E3

P1-P3P4-P6P7-P9P10-P12
Si7850DP
www.vishay.com
Vishay Siliconix
S09-0227-Rev. E, 09-Feb-09
1
Document Number: 71625
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 60 V (D-S) Fast Switching MOSFET
FEATURES
• TrenchFET
®
power MOSFETs
• New low thermal resistance PowerPAK
®
package with low 1.07 mm profile
• PWM optimized for fast switching
• 100 % R
g
tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Primary side switch for 24 V DC/DC applications
• Secondary synchronous rectifier
Notes
a. Surface mounted on 1" x 1" FR4 board
b. Guaranteed by design, not subject to production testing
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
max. () at V
GS
= 10 V 0.022
R
DS(on)
max. () at V
GS
= 4.5 V 0.031
Q
g
typ. (nC) 18
I
D
(A) 10.3
Configuration Single
PowerPAK
®
SO-8 Single
Top View
1
6.15 mm
5.15 mm
Bottom View
4
G
3
S
2
S
1
S
D
8
D
6
D
7
D
5
Available
N-Channel MOSFE
T
G
D
S
ORDERING INFORMATION
Package PowerPAK SO-8
Lead (Pb)-free Si7850DP-T1-E3
Lead (Pb)-free and halogen-free Si7850DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL 10 s STEADY STATE UNIT
Drain-source voltage V
DS
60 60
V
Gate-source voltage V
GS
± 20 ± 20
Continuous drain current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
10.3 6.2
A
T
A
= 85 °C 7.5 4.5
Continuous source current I
S
3.7 1.5
Pulsed drain current I
DM
40 40
Avalanche current
b
I
AS
15 15
Single avalanche energy
b
E
AS
11 11 mJ
Maximum power dissipation
a
T
A
= 25 °C
P
D
4.5 1.8
W
T
A
= 85 °C 2.3 0.9
Operating junction and storage temperature range T
J
, T
stg
-55 to +150 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient
a
t 10 s
R
thJA
22 28
°C/WSteady state 58 70
Maximum junction-to-case (drain) Steady state R
thJC
2.6 3.3
Si7850DP
www.vishay.com
Vishay Siliconix
S09-0227-Rev. E, 09-Feb-09
2
Document Number: 71625
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test: pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 250 μA 60 - -
V
Gate threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1 - 3
Gate-body leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
DS
= 60 V, V
GS
= 0 V - - 1
μA
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 °C - - 20
On-state drain current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V 40 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 10.3 A - 0.018 0.022
V
GS
= 4.5 V, I
D
= 8.7 A - 0.025 0.031
Forward transconductance
a
g
fs
V
DS
= 15 V, I
D
= 10.3 A - 26 - S
Diode forward voltage
a
V
SD
I
S
= 3.8 A, V
GS
= 0 V - 0.85 1.2 V
Dynamic
b
Total gate charge Q
g
V
DS
= 30 V, V
GS
= 10 V, I
D
= 10.3 A
-1827
nCGate-source charge Q
gs
-3.4-
Gate-drain charge Q
gd
-5.3-
Gate resistance R
g
0.5 1.4 2.2
Turn-on delay time t
d(on)
V
DD
= 30 V, R
L
= 30
I
D
1 A, V
GEN
= 10 V, R
g
= 6
-1020
ns
Rise time t
r
-1020
Turn-off delay time t
d(off)
-2550
Fall time t
f
-1224
Source-drain reverse recovery time t
rr
I
F
= 3.8 A, di/dt = 100 A/μs - 50 80
Si7850DP
www.vishay.com
Vishay Siliconix
S09-0227-Rev. E, 09-Feb-09
3
Document Number: 71625
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
Capacitance
0
8
16
24
32
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
= 10 V thru 5 V
4 V
3V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0
8
16
24
32
40
012345
T
C
= 150 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
25 °C
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0 8 16 24 32 40
V
GS
= 10
V
- On-Resistance ()R
DS(on)
I
D
- Drain Current (A)
V
GS
= 4.5
V
0
2
4
6
8
10
0 4 8 12 16 20
V
DS
= 30 V
I
D
= 10.3 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
2.0 2.5
1
10
50
0 0.5 1.0 1.5
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0
200
400
600
800
1000
1200
1400
0 102030405060
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
P1-P3P4-P6P7-P9P10-P12

SI7850DP-T1-E3

Mfr. #:
Buy SI7850DP-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Delivery:
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