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VEMD1060X01

P1-P3P4-P6
VEMD1060X01
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 30-Jun-16
1
Document Number: 84295
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
VEMD1060X01 is a high speed and high sensitive PIN
photodiode with a highly linear photoresponse. It is a low
profile surface mount device (SMD) including the chip with a
0.23 mm
2
sensitive area detecting visible and near infrared
radiation.
FEATURES
• Package type: surface mount
• Package form: 0805 top view
• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
• Radiant sensitive area (in mm
2
): 0.23
• AEC-Q101 qualified
• High photo sensitivity
• High radiant sensitivity
• Excellent I
ra
linearity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 70°
• Floor life: 72 h, MSL 4, according to J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector
• Small signal detection
• Proximity sensors
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT I
ra
(μA) ϕ (deg) λ
0.1
(nm)
VEMD1060X01 1.8 ± 70 350 to 1070
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMD1060X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 top view
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
20 V
Power dissipation T
amb
≤ 25 °C P
V
215 mW
Junction temperature T
j
110 °C
Operating temperature range T
amb
-40 to +110 °C
Storage temperature range T
stg
-40 to +110 °C
Soldering temperature According to reflow solder profile Fig. 6 T
sd
260 °C
Thermal resistance junction / ambient According to EIA / JESD 51 R
thJA
270 K/W
VEMD1060X01
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 30-Jun-16
2
Document Number: 84295
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable.
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
-0.91.1V
Breakdown voltage I
R
= 100 μA, E = 0 V
(BR)
20 - - V
Reverse dark current V
R
= 10 V, E = 0 I
ro
-0.015nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
-3.8-pF
V
R
= 3 V, f = 1 MHz, E = 0 C
D
-1.7-pF
Open circuit voltage E
e
= 1 mW/cm
2
, λ = 950 nm V
o
- 350 - mV
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
, λ = 950 nm TK
Vo
--2.6-mV/K
Short circuit current E
e
= 1 mW/cm
2
, λ = 950 nm I
k
-1.8-μA
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
, λ = 835 nm TK
Ik
-0.1-%/K
Reverse light current
E
e
= 1 mW/cm
2
, λ = 950 nm, V
R
= 5 V I
ra
1.4 1.8 3 μA
E
e
= 1 mW/cm
2
, λ = 890 nm, V
R
= 5 V I
ra
-2.6-μA
Angle of half sensitivity ϕ -± 70-deg
Wavelength of peak sensitivity λ
p
- 820 - nm
Range of spectral bandwidth λ
0.1
- 350 to 1070 - nm
Rise time V
R
= 5 V, R
L
= 50 Ω, λ = 830 nm t
r
-60-ns
Fall time V
R
= 5 V, R
L
= 50 Ω, λ = 830 nm t
f
-80-ns
0.0001
0.001
0.01
0.1
1
10
100
-40 -20 0 20 40 60 80 100
I
ro
- Reverse Dark Current (nA)
T
amb
- Ambient Temperature (°C)
V
R
= 10 V
0.6
0.8
1.0
1.2
1.4
-40-200 20406080100
I
ra rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
835 nm
V
R
= 10 V
940 nm
865 nm
VEMD1060X01
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 30-Jun-16
3
Document Number: 84295
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
0.01
0.1
1
10
100
0.01 0.1 1 10
I
ra
- Reverse Light Current (μA)
E
e
- Irradiance (mW/cm
2
)
V
R
= 5 V, λ = 950 nm
0.01
0.1
1
10
0.1 1 10 100
I
ra
- Reverse Light Current (μA)
V
R
- Reverse Voltage (V)
0.01 mW/cm
2
0.02 mW/cm
2
0.05 mW/cm
2
0.1 mW/cm
2
0.2 mW/cm
2
2.0 mW/cm
2
5.0 mW/cm
2
0.5 mW/cm
2
1.0 mW/cm
2
10 mW/cm
2
λ = 950 nm
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.001 0.01 0.1 1 10 100
C
D
- Capacitance (pF)
V
R
- Reverse Voltage (V)
f = 1 MHz, E = 0
0
0.2
0.4
0.6
0.8
1.0
400 500 600 700 800 900 1000 1100
S(λ)
rel
- Relative Spectral Sensitivity
λ - Wavelength (nm)
S
rel
- Relative Radiant Sensitivity
0.6
80°
0°
0.7
0.4 0.2 0
30°
70°
60°
50°
40°
10° 20°
1.0
0.9
0.8
ϕ - Angular Displacement
P1-P3P4-P6

VEMD1060X01

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Manufacturer:
Description:
Photodiode Chip 820nm Automotive 2-Pin Case 0805 T/R
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