IRLBD59N04ETRLP Datasheet IRLBD59N04ETRLP | P1-P3

Parameter Max. Units

I

D

@ T

C

= 25°C Continuous Drain Current, V

GS

@ 10V 59

I

D

@ T

C

= 100°C Continuous Drain Current, V

GS

@ 10V 41 A

I

DM

Pulsed Drain Current  230

P

D

@T

C

= 25°C Power Dissipation 130 W

Linear Derating Factor 0.89 W/°C

V

GS

Gate-to-Source Voltage ± 10 V

E

AS

Single Pulse Avalanche Energy 340 mJ

I

AR

Avalanche Current 35 A

E

AR

Repetitive Avalanche Energy 13 mJ

dv/dt Peak Diode Recovery dv/dt  3.6 V/ns

I

G

V

GS

Clamp Current ± 50 mA

V

ESD

Electrostatic Votage Rating ± 2.0 kV

T

J

Operating Junction and -55 to + 175 °C

T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

IRLBD59N04E

HEXFET

®

Power MOSFET

The IRLBD59N04E is a 40V, N-channel HEXFET

®

power MOSFET with gate protection provided by

integrated back to back zener diodes. Temperature

sensing is given by the change in forward voltage drop

of two antiparallel electrically isolated poly-silicon diodes.

The IRLBD59N04E provides cost effective temperature

sensing for system protection along with the quality and

ruggedness you expect from a HEXFET power MOSFET.

Absolute Maximum Ratings

Parameter Typ. Max. Units

R

θJC

Junction-to-Case ––– 1.12 °C/W

R

θJA

Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40

Thermal Resistance

V

DSS

= 40V

R

DS(on)

= 0.018Ω

I

D

= 59A

 Integrated Temperature Sensing Diode

 Ultra Low On-Resistance

 Dynamic dv/dt Rating

 175°C Operating Temperature

 Fully Avalanche Rated

 Zener Gate Protected

Description

11/13/01

www.irf.com 1

5 Lead-D

2

Pak

PD -93910B

IRLBD59N04E

2 www.irf.com

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage 40 ––– ––– VV

GS

= 0V, I

D

= 250µA

∆V

(BR)DSS

/∆T

J

Breakdown Voltage Temp. Coefficient ––– 0.044 ––– V/°C Reference to 25°C, I

D

= 1mA

––– ––– 0.018 V

GS

= 10V, I

D

= 35A 

––– ––– 0.021

Ω

V

GS

= 5.0V, I

D

= 30A 

V

GS(th)

Gate Threshold Voltage 1.0 ––– 2.0 V V

DS

= V

GS

, I

D

= 250µA

V

GS

Clamp Voltage 10 ––– 20 V I

GSS

= 20µA

g

fs

Forward Transconductance 29 ––– ––– SV

DS

= 25V, I

D

= 35A

––– ––– 25

µA

V

DS

= 40V, V

GS

= 0V

––– ––– 250 V

DS

= 32V, V

GS

= 0V, T

J

= 150°C

Gate-to-Source Forward Leakage ––– ––– 1.0 V

GS

= 5.0V

Gate-to-Source Reverse Leakage ––– ––– -1.0 V

GS

= -5.0V

Q

g

Total Gate Charge ––– ––– 50 I

D

= 35A

Q

gs

Gate-to-Source Charge ––– ––– 13 nC V

DS

= 32V

Q

gd

Gate-to-Drain ("Miller") Charge ––– ––– 18 V

GS

= 5.0V, See Fig. 6 and 13 

t

d(on)

Turn-On Delay Time ––– 7.8 ––– V

DD

= 20V

t

r

Rise Time ––– 84 –––

ns

I

D

= 35A

t

d(off)

Turn-Off Delay Time ––– 33 ––– R

G

= 5.1Ω,

t

f

Fall Time ––– 67 ––– V

GS

= 5.0V, See Fig.10 

Between lead,

6mm (0.25in.)

from package

and center of die contact

C

iss

Input Capacitance ––– 2190 ––– V

GS

= 0V

C

oss

Output Capacitance ––– 670 ––– V

DS

= 25V

C

rss

Reverse Transfer Capacitance ––– 130 ––– pF ƒ = 1.0MHz, See Fig. 5

S

D

G

Parameter Min. Typ. Max. Units Conditions

I

S

Continuous Source Current MOSFET symbol

(Body Diode)

––– –––

showing the

I

SM

Pulsed Source Current integral reverse

(Body Diode) 

––– –––

p-n junction diode.

V

SD

Diode Forward Voltage ––– ––– 1.3 V T

J

= 25°C, I

S

= 35A, V

GS

= 0V 

t

rr

Reverse Recovery Time ––– 57 86 ns T

J

= 25°C, I

F

= 35A

Q

rr

Reverse Recovery Charge ––– 84 130 nC di/dt = 100A/µs



t

on

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L

S

+L

D

)

Source-Drain Ratings and Characteristics

59

230

A

S

D

G

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)

R

DS(on)

Static Drain-to-Source On-Resistance

I

GSS

nH

L

S

Internal Source Inductance ––– 5.0 –––

L

D

Internal Drain Inductance ––– 2.0 –––

I

DSS

Drain-to-Source Leakage Current

Sense Diode Rating

Parameter Min. Typ. Max. Units Conditions

V

FM

Sense Diode Maximum Voltage Drop 675 ––– 725 mV I

F

= 250µA, T

J

= 25°C

∆V

F

/∆T

J

Sense Diode Temperature Coefficient -1.30 -1.40 -1.58 mV/°CI

F

= 250µA, (T

J

= 25°C and 160°C)

µA

IRLBD59N04E

www.irf.com 3

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.7V

300µs PULSE WIDTH

T

J

= 25°C

VGS

TOP 15V

10V

7.0V

5.5V

4.5V

4.0V

3.5V

BOTTOM 2.7V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.7V

300µs PULSE WIDTH

T

J

= 175°C

VGS

TOP 15V

10V

7.0V

5.5V

4.5V

4.0V

3.5V

BOTTOM 2.7V

2.0 4.0 6.0 8.0 10.0

V

GS

, Gate-to-Source Voltage (V)

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 15V

300µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T

J

, Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 59A

V

GS

= 10V

IRLBD59N04ETRLP

IRLBD59N04ETRLP

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