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APTGL180A1202G

P1-P3P4-P5
APTGL180A1202G
APTGL180A1202G – Rev 1 October, 2012
www.microsemi.com
1-5
All ratings @ T
j
= 25°C unless otherwise specified
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200 V
T
C
= 25°C
220
I
C
Continuous Collector Current
T
C
= 80°C
180
I
CM
Pulsed Collector Current T
C
= 25°C 300
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation
T
C
= 25°C
750 W
RBSOA Reverse Bias Safe Operating Area T
j
= 125°C 300A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
1
2
3
4
18
10 9
6
8
7
13
16
14
15
12
17
11
5
Pins 1/2/3/4 ; 5/6/7/8 ; 11/12/13/14/15/16 must be shorted
together
V
CES
= 1200V
I
C
= 180A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
- Soft recovery parallel diodes
- Low diode VF
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
C
of V
CEsat
RoHS Compliant
Phase leg
Trench + Field Stop IGBT4
Power Module
APTGL180A1202G
APTGL180A1202G – Rev 1 October, 2012
www.microsemi.com
2-5
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
I
CES
Zero Gate Voltage Collector Current V
GE
= 0V, V
CE
= 1200V 300 µA
T
j
= 25°C 1.8 2.2
V
CE(sat)
Collector Emitter saturation Voltage
V
GE
= 15V
I
C
= 150A
T
j
= 150°C 2.2
V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 5.5 mA 5.0 5.8 6.5 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V 200 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
ies
Input Capacitance 9.3
C
oes
Output Capacitance 0.58
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
0.5
nF
Q
G
Gate charge
V
GE
= -8V / 15V ; V
CE
=600V
I
C
=150A
0.85 µC
T
d(on)
Turn-on Delay Time 130
T
r
Rise Time 20
T
d(off)
Turn-off Delay Time 300
T
f
Fall Time
Inductive Switching (25°C)
V
GE
= ±15V
V
CE
= 600V
I
C
= 150A
R
G
= 3
45
ns
T
d(on)
Turn-on Delay Time 150
T
r
Rise Time 35
T
d(off)
Turn-off Delay Time 350
T
f
Fall Time
Inductive Switching (150°C)
V
GE
= ±15V
V
CE
= 600V
I
C
= 150A
R
G
= 3
80
ns
E
on
Turn-on Switching Energy T
J
= 150°C 13.5 mJ
E
off
Turn-off Switching Energy
V
GE
= ±15V
V
CE
= 600V
I
C
= 150A
R
G
= 3
T
J
= 150°C 14.5 mJ
I
sc
Short Circuit data
V
GE
≤15V ; V
Bus
= 900V
t
p
≤10µs ; T
j
= 150°C
600 A
R
thJC
Junction to Case Thermal Resistance
0.20
°C/W
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
1200 V
I
RM
Maximum Reverse Leakage Current V
R
=1200V 100 µA
I
F
DC Forward Current
Tc = 80°C 150 A
T
j
= 25°C 1.7 2.2
V
F
Diode Forward Voltage
I
F
= 150A
V
GE
= 0V
T
j
= 150°C 1.65
V
T
j
= 25°C 155
t
rr
Reverse Recovery Time
T
j
= 150°C 300
ns
T
j
= 25°C 13.3
Q
rr
Reverse Recovery Charge
T
j
= 150°C 27.6
µC
T
j
= 25°C 5.9
E
rr
Reverse Recovery Energy
I
F
= 150A
V
R
= 600V
di/dt =3400A/µs
T
j
= 150°C 11.5
mJ
R
thJC
Junction to Case Thermal Resistance
0.38
°C/W
APTGL180A1202G
APTGL180A1202G – Rev 1 October, 2012
www.microsemi.com
3-5
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000 V
T
J
Operating junction temperature range -40 175
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2 3 N.m
Wt Package Weight
75
g
SP2 Package outline (dimensions in mm)
Typical Performance Curve
Hard
switching
ZCS
ZVS
0
30
60
90
120
150
180
0 40 80 120 160 200 240
I
C
(A)
Fmax, Operating Frequency (kHz)
V
CE
=600V
D=50%
R
G
=3 Ω
T
J
=150°C
Tc=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
D = 0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration in Seconds
Thermal Impedance (°C/W)
Diode
Forward Characteristic of diode
T
J
=25°C
T
J
=150°C
0
50
100
150
200
250
300
0 0.5 1 1.5 2 2.5
V
F
(V)
I
F
(A)
P1-P3P4-P5

APTGL180A1202G

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Buy APTGL180A1202G
Manufacturer:
Microchip / Microsemi
Description:
IGBT Modules DOR CC20003
Lifecycle:
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