TSM250N02D
Taiwan Semiconductor
Document Number: DS_P0000063 2 Version: B15
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL
MIN TYP MAX
UNIT
Static
(Note 3)
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250µA BV
DSS
20 -- --
V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA V
GS(TH)
0.4 0.6 0.8 V
Gate Body Leakage V
GS
= ±10V, V
DS
= 0V I
GSS
-- --
±100 nA
Zero Gate Voltage Drain Current V
DS
=16V, V
GS
=0V I
DSS
-- --
1 µA
Drain-Source On-State Resistance
V
GS
= 4.5V, I
D
= 4A
R
DS(on)
--
20 25
mΩ
V
GS
= 2.5V, I
D
= 3A --
27 35
V
GS
= 1.8V, I
D
= 2A --
39 55
Forward Transconductance V
DS
=10V, I
D
=3A g
fs
-- 6.5 -- S
Dynamic
(Note 4)
Total Gate Charge
V
DS
= 10V, I
D
= 4A,
V
GS
= 4.5V
Q
g
--
7.7
11
nC
Gate-Source Charge Q
gs
--
0.9
1
Gate-Drain Charge Q
gd
--
2.4
5
Input Capacitance
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
C
iss
--
535
775
pF
Output Capacitance C
oss
--
60
85
Reverse Transfer Capacitance C
rss
--
34
50
Switching
(Note 5)
Turn-On Delay Time
V
DD
= 10V, I
D
= 1A,
V
GS
= 4.5V, R
G
= 25Ω
t
d(on)
--
4.1
8
ns
Turn-On Rise Time t
r
--
11.6
22
Turn-Off Delay Time t
d(off)
--
23.9
45
Turn-Off Fall Time t
f
--
7.6
14
Source-Drain Diode
(Note 3)
Continuous Source Current
V
G
=V
D
=0V,
Force Current
I
-- -- 5.8 A
Pulsed Source Current
I
-- -- 23.2
A
Forward On Voltage V
GS
= 0V, I
S
= 1A V
SD
-- -- 1 V
Notes:
1. Current limited by package.
2. Pulse width limited by the maximum junction temperature.
3. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%.
4. For DESIGN AID ONLY, not subject to production testing.
5. Switching time is essentially independent of operating temperature.
