www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83531
786 Rev. 1.8, 16-May-08
TCDT1110/TCDT1110G
Vishay Semiconductors
Optocoupler, Phototransistor
Output
Fig. 7 - Switching Times
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
Fig. 8 - Total Power Dissipation vs. Ambient Temperature
Fig. 9 - Forward Current vs. Forward Voltage
Fig. 10 - Relative Current Transfer Ratio vs. Ambient Temperature
Fig. 11 - Collector Dark Current vs. Ambient Temperature
t
p
t
t
0
0
10 %
90 %
100 %
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
t
p
Pulse duration
t
d
Delay time
t
r
Rise time
t
on
(= t
d
+ t
r
) Turn-on time
t
s
Storage time
t
f
Fall time
t
off
(= t
s
+ t
f
)Turn-off time
96 11698
0
50
100
150
200
250
300
04080 120
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
96 11700
Coupled device
Phototransistor
IR-diode
0.1
1
10
100
1000
0
V
F
- Forward Voltage (V)
96 11862
I
F
- Forward Current (mA)
1.6
0.2
1.4
1.2
1.0
0.80.6
0.4
2.0
1.8
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 30 - 20- 10 0 10 20 30 40 50 60 70 80
T
amb
- Ambient Temperature (°C)
96 11874
CTR
rel
- Relative Current Transfer Ratio
V
CE
= 10 V
I
F
= 10 mA
0 25 50 75 100
1
10
100
1000
10 000
I
CEO
- Collector Dark Current
with Open Base (nA)
T
amb
- Ambient Temperature (°C)
V
CE
= 30 V
I
F
= 0 A
