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BTW69-1200N

P1-P3P4-P6P7-P9
This is information on a product in full production.
June 2013 DocID024685 Rev 1 1/9
BTW69-1200N
50 A – 1200 V non insulated SCR thyristor
Datasheet - production data
Features
On-state rms current: 50 A
Blocking voltage: 1200 V
Gate current: 50 mA
Applications
Solid state relay
Battery charging system
Uninterruptible power supply
Variable speed motor drive
Industrial welding systems
By pass AC switch
Description
Available in non insulated TOP3 high power
package, the BTW69-1200N is suitable for
applications where power switching and power
dissipation are critical, such as by-pass switch,
controlled AC rectifier bridge, in solid state relay,
battery charger, uninterruptible power supply,
welding equipment and motor driver applications.
Based on a clip assembly technology, the
BTW69-1200N offers a superior performance in
surge current handling and thermal cooling
capabilities.
A
A
K
G
TOP3 non insulated
A
K
G
Table 1. Device summary
Symbol Value
I
T(RMS)
50 A
V
DRM
/V
RRM
1200 V
I
GT
50 mA
www.st.com
Characteristics BTW69-1200N
2/9 DocID024685 Rev 1
1 Characteristics
Table 2. Absolute maximum ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
On-state current rms (180° conduction angle) T
c
= 102 °C 50 A
IT
(AV)
Average on-state current (180° conduction angle) T
c
= 102 °C 31 A
I
TSM
Non repetitive surge peak on-state
current
t
p
= 8.3 ms
T
j
= 25 °C
763
A
t
p
= 10 ms 700
I
²
tI
²
t Value t
p
= 10 ms T
j
= 25 °C 2450 A
2
S
dI/dt
Critical rate of rise of on-state current
Gate supply: I
G
= 100 mA, dI
G
/dt = 1 A/µs
100 A/µs
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 8 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V
GM
Maximum peak reverse gate voltage 5 V
Table 3. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Test conditions Value Unit
I
GT
V
D
= 12 V, R
L
= 33
MIN. 8
mA
MAX. 50
V
GT
MAX. 1.3 V
V
GD
V
D
= V
DRM,
R
L
= 3.3 k T
j
= 125 °C MIN. 0.2 V
I
H
I
T
= 500 mA, gate open MAX. 100 mA
I
L
I
G
= 1.2 x I
GT
TYP. 125 mA
t
gt
I
T
= 50 A, V
D
= V
DRM
, I
G
= 200 mA, dI
G
/dt = 0.2 A/µs TYP. 2 µs
dV/dt V
D
= 67% V
DRM,
gate open T
j
= 125 °C MIN. 1000 V/µs
t
q
V
D
= 800 V, I
TM
= 50 A, V
R
= 75 V,
t
p
= 100 µs, dI
TM
/dt = 30 A/µs,
dV
D
/dt = 20 V/µs
T
j
= 125 °C TYP. 100 µs
V
TM
I
TM
= 100 A, t
p
= 380 µs T
j
= 25 °C MAX. 1.6 V
V
t0
Threshold voltage T
j
= 125 °C MAX. 0.9 V
R
D
Dynamic resistance T
j
= 125 °C MAX. 8.5 m
I
DRM
I
RRM
V
D
= V
DRM
V
R
= V
RRM
T
j
= 25 °C
MAX.
10 µA
T
j
= 125 °C 5 mA
DocID024685 Rev 1 3/9
BTW69-1200N Characteristics
9
Table 4. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (DC, typ.) 0.45 °C/W
R
th(j-a)
Junction to ambient (DC) 50 °C/W
Figure 1. Maximum average power dissipation
versus average on-state current
Figure 2. Correlation between maximum
average power dissipation and maximum
allowable temperatures
P(W)
0
5
10
15
20
25
30
35
40
45
50
55
0 5 10 15 20 25 30 35 40
DC
I (A)
T(AV)
360°
a
a = 180°
a = 120°
a = 90°
a = 60°
a = 30°
0
10
20
30
40
50
0 25 50 75 100 125
P
(AV)
(W)
100.2
102.7
105.2
107.7
110.2
112.7
115.2
117.7
120.2
122.7
T
c
(°C)
R
TH
(assembly)
0 °C/W
1 °C/W
2 °C/W
3 °C/W
T
a
(°C)
a = 180°
Figure 3. Average and DC on-state current
versus case temperature
Figure 4. Average and DC on-state current
versus ambient temperature
I (A)
T(AV)
0
5
10
15
20
25
30
35
40
45
50
55
0 25 50 75 100 125
DC
a = 180°
a = 120°
a = 90°
a = 60°
a = 30°
T (°C)
case
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125
DC
I (A)
T(AV)
a = 180°
T (°C)
a
P1-P3P4-P6P7-P9

BTW69-1200N

Mfr. #:
Buy BTW69-1200N
Manufacturer:
STMicroelectronics
Description:
SCRs 1200V non-insulated SCR 50A 50mA
Lifecycle:
New from this manufacturer.
Delivery:
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