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SIZ340DT-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
SiZ340DT
www.vishay.com
Vishay Siliconix
S14-0611-Rev. B, 24-Mar-14
4
Document Number: 62877
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
10
20
30
40
50
0 0.5 1 1.5 2
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3 V
V
GS
= 2 V
0
0.005
0.010
0.015
0 10 20 30 40 50
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0.020
0
2
4
6
8
10
0 2.6 5.2 7.8 10.4 13
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 24 V
V
DS
= 15 V
V
DS
= 8 V
I
D
= 15.6 A
0
1
2
3
4
5
0.6 1.2 1.8 2.4 3
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
0
180
360
540
720
900
0 5 10 15 20
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
D
GS
GS
1
0
SiZ340DT
www.vishay.com
Vishay Siliconix
S14-0611-Rev. B, 24-Mar-14
5
Document Number: 62877
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
Safe Operating Area, Junction-to-Ambient
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.9
1.1
1.3
1.5
1.7
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
- Temperature (°C)
I
D
= 250 μA
0
0.005
0.01
0.015
0.02
2 4 6 8 10
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 15.6 A
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
Power (W)
Time (s)
0.01
0.1
1
10
100
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS(on)
*
1 ms
T
A
= 25 °C
Single Pulse
BVDSS Limited
10 ms
100 μs
DC
10 s
1 s
1000
SiZ340DT
www.vishay.com
Vishay Siliconix
S14-0611-Rev. B, 24-Mar-14
6
Document Number: 62877
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating*
Power, Junction-to-Case Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0
10
20
30
40
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Package limited
0
5
10
15
20
0 25 50 75 100 125 150
Power (W)
T
C
- Case Temperature (°C)
0.0
0.6
1.1
1.7
2.2
0 25 50 75 100 125 150
Power (W)
T
A
- Ambient Temperature (°C)
P1-P3P4-P6P7-P9P10-P12P13-P14

SIZ340DT-T1-GE3

Mfr. #:
Buy SIZ340DT-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs PowerPAIR 3 x 3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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