BAT754_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 3 — 9 October 2012 3 of 10
NXP Semiconductors
BAT754 series
Schottky barrier diodes
5. Limiting values
[1] T
j
=25C before surge.
6. Thermal characteristics
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
7. Characteristics
[1] Pulse test: t
p
300 s; 0.02.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
R
reverse voltage - 30 V
I
F
forward current - 200 mA
I
FRM
repetitive peak forward
current
t
p
1s; 0.5 300 mA
I
FSM
non-repetitive peak
forward current
sine wave;
t
p
<8.3ms
[1]
-600mA
Per device; one diode loaded
T
j
junction temperature - 125 C
T
amb
ambient temperature 55 +125 C
T
stg
storage temperature 65 +150 C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device; one diode loaded
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 500 K/W
Table 7. Characteristics
T
amb
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage
[1]
I
F
= 0.1 mA - - 200 mV
I
F
= 1 mA - - 260 mV
I
F
= 10 mA - - 340 mV
I
F
= 30 mA - - 420 mV
I
F
= 100 mA - 600 - mV
I
R
reverse current V
R
=25V
[1]
--2A
C
d
diode capacitance f = 1 MHz; V
R
=1V --10pF
