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IRFM460
P1-P3
P4-P6
P7-P7
IRFM460
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
13a
&
b
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
100
µ
s
DC
OPERATIO
N IN THI
S AREA LIM
ITED
BY R
DS(on)
www.irf.com
5
IRFM460
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(
off)
t
f
Fig 10b.
Switching Time Waveforms
V
DS
Pulse
Width
≤ 1
µs
Duty
Factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
IRFM460
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T
.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
Type
as
D.U.T
.
Current
Sampling
Resistors
+
-
10
V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circui
t
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U
.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
.
10
10
P1-P3
P4-P6
P7-P7
IRFM460
Mfr. #:
Buy IRFM460
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 500V 19A TO-254AA
Lifecycle:
New from this manufacturer.
Delivery:
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Ups
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EMS
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IRFM460