www.vishay.com Document Number: 91230
2 S-81271-Rev. A, 16-Jun-08
IRFP450A, SiHFP450A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80 % V
DS
.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-40
°C/WCase-to-Sink, Flat, Greased Surface R
thCS
0.24 -
Maximum Junction-to-Case (Drain) R
thJC
-0.65
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 µA 500 - -
V
V
DS
Temperature Coefficient ΔV
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.58 -
V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 2.0 - 4.0
V
Gate-Source Leakage I
GSS
V
GS
= ± 30 V - - ± 100
nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 500 V, V
GS
= 0 V - - 25
µA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 8.4 A
b
--0.40Ω
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 8.4 A
b
7.8 - -
S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 2038 -
pF
Output Capacitance C
oss
- 307 -
Reverse Transfer Capacitance C
rss
-10-
Output Capacitance C
oss
V
GS
= 0 V; V
DS
= 1.0 V, f = 1.0 MHz 2859
Output Capacitance C
oss
V
GS
= 0 V; V
DS
= 400 V, f = 1.0 MHz 81
Effective Output Capacitance C
oss
eff. V
GS
= 0 V; V
DS
= 0 V to 400 V
c
96
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 14 A, V
DS
= 400 V,
see fig. 6 and 13
b
--64
nC Gate-Source Charge Q
gs
--16
Gate-Drain Charge Q
gd
--26
Turn-On Delay Time t
d(on)
V
DD
= 250 V, I
D
= 14 A,
R
G
= 6.2 Ω, R
D
= 17 Ω, see fig. 10
b
-15-
ns
Rise Time t
r
-36-
Turn-Off Delay Time t
d(off)
-35-
Fall Time t
f
-29-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--14
A
Pulsed Diode Forward Current
a
I
SM
--56
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 14 A, V
GS
= 0 V
b
--1.4
V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 14 A, dI/dt = 100 A/µs
b
- 487 731
ns
Body Diode Reverse Recovery Charge Q
rr
-3.95.8µC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
S
D
G
