MBR10HxxCT, MBRF10HxxCT, MBRB10HxxCT
www.vishay.com
Vishay General Semiconductor
Revision: 29-Jul-15
1
Document Number: 88668
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters,
and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 5 A
V
RRM
90 V to 100 V
I
FSM
150 A
V
F
0.61 V
I
R
3.5 μA
T
J
max. 175 °C
Package
TO-220AB, ITO-220AB,
TO-263AB
Diode variations Dual common cathode
TO-263AB
1
2
3
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR10H90CT
MBR10H100CT
ITO-220AB
MBRF10H90CT
MBRF10H100CT
MBRB10H90CT
MBRB10H100CT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
PIN 2
PIN 1
PIN 3
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR10H90CT MBR10H100CT UNIT
Maximum repetitive peak reverse voltage V
RRM
90 100
VWorking peak reverse voltage V
RWM
90 100
Maximum DC blocking voltage V
DC
90 100
Maximum average forward rectified current
at T
C
= 105 °C
total device
I
F(AV)
10
A
per diode 5.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
150
Peak repetitive reverse current per diode at t
p
= 2.0 µs, 1 kHz I
RRM
0.5
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-65 to +175 °C
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V
AC
1500 V
