APT85GR120B2 Datasheet APT85GR120B2, APT85GR120L | P1-P3

052-6402 Rev A 8-2012

APT85GR120B2_L

Symbol Parameter Ratings Unit

V

ces

Collector Emitter Voltage 1200

V

GE

Gate-Emitter Voltage ±30

I

C1

Continuous Collector Current

@ T

C

= 25°C 170

AI

C2

Continuous Collector Current @ T

C

= 100°C 85

I

CM

Pulsed Collector Current

1

340

SCWT Short Circuit Withstand Time: V

CE

= 600V, V

GE

= 15V, T

C

=125°C 10 s

P

D

Total Power Dissipation @ T

C

= 25°C 962 W

T

J

,T

STG

Operating and Storage Junction Temperature Range -55 to 150

°C

T

L

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise speciﬁ ed.

STATIC ELECTRICAL CHARACTERISTICS

Microsemi Website - http://www.microsemi.com

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Symbol Parameter Min Typ Max Unit

V

(BR)CES

Collector-Emitter Breakdown Voltage (V

GE

= 0V, I

C

= 1.0mA) 1200

Volts

V

GE(TH)

Gate Threshold Voltage (V

CE

= V

GE

, I

C

= 2.5mA, T

j

= 25°C) 3.5 5.0 6.5

V

CE(ON)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 85A, T

j

= 25°C) 2.5 3.2

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 85A, T

j

= 125°C) 3.3

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 170A, T

j

= 25°C) 3.5

I

CES

Collector Cut-off Current (V

CE

= 1200V, V

GE

= 0V, T

j

= 25°C)

2

10 1000

A

Collector Cut-off Current (V

CE

= 1200V, V

GE

= 0V, T

j

= 125°C)

2

100

I

GES

Gate-Emitter Leakage Current (V

GE

= ±20V) ±250 nA

Ultra Fast NPT - IGBT

®

The Ultra Fast NPT - IGBT

®

is a new generation of high voltage power IGBTs.

Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT

®

offers superior

ruggedness and ultrafast switching speed.

Features

• Low Saturation Voltage

• Low Tail Current

• RoHS Compliant

• Short Circuit Withstand Rated

• High Frequency Switching

• Ultra Low Leakage Current

Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for

applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power

supplies (UPS).

APT85GR120B2

APT85GR120L

1200V, 85A, V

ce(on)

= 2.5V Typical

APT85GR120B2_L

052-6402 Rev A 8-2012

THERMAL AND MECHANICAL CHARACTERISTICS

DYNAMIC CHARACTERISTICS

Symbol Characteristic Min Typ Max Unit

R

JC

Junction to Case Thermal Resistance (IGBT) .13

°C/W

R

JA

Junction to Ambient Thermal Resistance 40

W

T

Package Weight

B2

.22 oz

6g

L

.36 oz

10 g

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.

3 See Mil-Std-750 Method 3471.

4 R

G

is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)

5 E

on2

is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the

clamping diode.

6 E

off

is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.

Microsemi reserves the right to change, without notice, the speciﬁ cations and information contained herein.

Symbol Parameter Test Conditions Min Typ Max Unit

C

ies

Input Capacitance Capacitance

V

GE

= 0V, V

CE

= 25V

f = 1MHz

8400

pF

C

oes

Output Capacitance 725

C

res

Reverse Transfer Capacitance 190

V

GEP

Gate to Emitter Plateau Voltage

Gate Charge

V

GE

= 15V

V

CE

= 600V

I

C

= 85A

7.5 V

Q

g

3

Total Gate Charge 490

660

nC

Q

ge

Gate-Emitter Charge 60 85

Q

gc

Gate- Collector Charge 230 320

t

d(on)

Turn-On Delay Time

Inductive Switching (25°C)

V

CC

= 600V

V

GE

= 15V

I

C

= 85A

R

G

= 4.3 

4

T

J

= +25°C

43

ns

t

r

Current Rise Time

70

t

d(off)

Turn-Off Delay Time 300

t

f

Current Fall Time 85

E

on2

5

Turn-On Switching Energy 6000 9000

J

E

off

6

Turn-Off Switching Energy

3800 5700

t

d(on)

Turn-On Delay Time Inductive Switching (125°C)

V

CC

= 600V

V

GE

= 15V

I

C

= 85A

R

G

= 4.3 

4

T

J

= +125°C

43

ns

t

r

Current Rise Time 70

t

d(off)

Turn-Off Delay Time 350

t

f

Current Fall Time 95

E

on2

5

Turn-On Switching Energy 7800 11,700

J

E

off

6

Turn-Off Switching Energy

4900 7350

0

0.02

0.04

0.06

0.08

0.10

0.12

0.14

10

-4

10

-3

10

-2

0.1 1

10

-5

Z



JC

, THERMAL IMPEDANCE (°C/W)

0.3

D = 0.9

0.7

SINGLE PULSE

RECTANGULAR PULSE DURATION (SECONDS)

Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

0.5

0.1

0.05

Peak T

J

= P

DM

x Z

θJC

+T

C

Duty Factor D =

t

1

/

t

2

t

2

t

1

P

DM

Note:

052-6402 Rev A 8-2012

APT85GR120B2_L

TYPICAL PERFORMANCE CURVES

0

50

100

150

200

250

-50 -25 0 25 50 75 100 125 150

0

1

2

3

4

5

6

-50 -25 0 25 50 75 100 125

1

2

3

4

5

6

6 8 10 12 14 16

0

50

100

150

200

250

300

0 1 2 3 4 5 6 7 8 9 10

0

50

100

150

200

250

300

0 4 8 12 16

0

20

40

60

80

100

120

140

160

180

200

0 1 2 3 4 5 6

250s PULSE

TEST<0.5 % DUTY

CYCLE

T

J

= 25°C.

250s PULSE TEST

<0.5 % DUTY CYCLE

V

GE

= 15V.

250s PULSE TEST

<0.5 % DUTY CYCLE

I

C

= 42.5A

I

C

= 85A

I

C

= 170A

I

C

= 85A

I

C

= 170A

13V

15V

T

J

= 25°C

T

J

= -55°C

V

GE

= 15V

T

J

= - 55°C

T

J

= 150°C

V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 3, Saturation Voltage Characteristics (T

J

= 25°C)

I

C

, COLLECTOR CURRENT (A)

T

J

= 25°C

T

J

= 125°C

V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 4, Output Characteristics (T

J

= 25°C)

I

C

, COLLECTOR CURRENT (A)

T

J

= 125°C

V

GE

, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 6, Transfer Characteristics

I

C

, COLLECTOR CURRENT (A)

V

GE

, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 7, On State Voltage vs Gate-to-Emitter Voltage

V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V)

T

J

, Junction Temperature (°C)

FIGURE 5, On State Voltage vs Junction Temperature

V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V)

T

C

, Case Temperature (°C)

FIGURE 9, DC Collector Current vs Case Temperature

I

C

, DC COLLECTOR CURRENT (A)

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

-.50 -.25 0 25 50 75 100 125 150

T

J

, JUNCTION TEMPERATURE

FIGURE 8, Threshold Voltage vs Junction Temperature

V

GS(TH)

, THRESHOLD VOLTAGE

(NORMALIZED)

6.5V

7V

I

C

= 42.5A

8.0V

9.0V

7.5V

10V

I

C

(A)

FIGURE 2, Max Frequency vs Current (T

case

= 75°C)

T

J

= 150°C

0

20

40

60

80

100

120

20 40 50 80 100 120 140 160

FREQUENCY (kHz)

APT85GR120B2

APT85GR120B2

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