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BT152X-400R,127

P1-P3P4-P6P7-P9P10-P12
NXP Semiconductors
BT152X-400R
SCR
BT152X-400R All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 18 March 2014 3 / 11
Symbol Parameter Conditions Min Max Unit
V
RGM
peak reverse gate voltage - 5 V
P
GM
peak gate power - 20 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
003aaj932
0
20
40
60
80
100
120
10
-2
10
-1
1 10
surge duration (s)
I
T(RMS)
(A)
f = 50 Hz; T
h
= 43 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
003aaj931
0
5
10
15
20
25
-50 0 50 100 150
I
T(RMS)
(A)
T
h
(°C)
43 °C
Fig. 2. RMS on-state current as a function of heatsink
temperature; maximum values
003aaj930
0
5
10
15
20
25
30
0 2 4 6 8 10 12 14
I
T(AV)
(A)
P
tot
(W)
1.9
2.2
2.8
4
125
84
43
2
T
h(max)
(°C)
a = 1.57
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
alpha = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of average on-state current; maximum values
NXP Semiconductors
BT152X-400R
SCR
BT152X-400R All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 18 March 2014 4 / 11
0
0
3
a
a
d
2
2
1
0
2
0
4
0
6
0
8
0
1
0
0
1
2
0
1
4
0
1
6
0
1
8
0
2
0
0
2
2
0
1
10
10
2
10
3
10
4
n
u
m
b
e
r
o
f
c
y
c
l
e
s
I
T
S
M
(
A
)
t
p
T
j(init)
= 25 °C max
I
T
I
TSM
t
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
0
0
3
a
a
d
2
2
2
10
10
2
10
3
1
0
-
5
1
0
-
4
1
0
-
3
1
0
-
2
t
p
(
s
)
I
T
S
M
(
A
)
t
p
T
j(init)
= 25 °C max
I
T
I
TSM
t
(1)
Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
with heatsink compound; Fig. 6 - - 4 K/WR
th(j-h)
thermal resistance
from junction to
heatsink
without heatsink compound; Fig. 6 - - 4.5 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
- 55 - K/W
NXP Semiconductors
BT152X-400R
SCR
BT152X-400R All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 18 March 2014 5 / 11
003aaj934
10
-1
10
-2
1
10
Z
th(j-h)
(K/W)
10
-3
t
p
(s)
10
-5
1 1010
-1
10
-2
10
-4
10
-3
t
p
t
p
T
P
t
T
δ =
(2)
(1)
(1) without heatsink compound
(2) with heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse width
9. Isolation characteristics
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
T
h
= 25 °C
- - 2500 V
C
isol
isolation capacitance from anode to external heatsink;
f = 1 MHz; T
h
= 25 °C
- 10 - pF
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C; Fig. 7 - 3 32 mA
I
L
latching current V
D
= 12 V; I
G
= 0.1 A; T
j
= 25 °C; Fig. 8 - 25 80 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - 15 60 mA
V
T
on-state voltage I
T
= 40 A; T
j
= 25 °C; Fig. 10 - 1.4 1.75 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
- 0.6 1 VV
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
0.25 0.4 - V
P1-P3P4-P6P7-P9P10-P12

BT152X-400R,127

Mfr. #:
Buy BT152X-400R,127
Manufacturer:
WeEn Semiconductors
Description:
SCRs RAIL TRIAC
Lifecycle:
New from this manufacturer.
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