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IRFH8330TRPBF

P1-P3P4-P6P7-P9
HEXFET
®
Power MOSFET
Notes through are on page 9
Features and Benefits
Applications
PQFN 5X6 mm
• Control MOSFET for high frequency buck converters
• Synchronous MOSFET for high frequency buck converters
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Source Bonding
Technolo
gy
Limited
)
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
C(Bottom)
= 25°C
Power Dissipation
Linear Deratin
g
Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
V
W
A
°C
Max.
17
36
210
± 20
30
14
56
25
-55 to + 150
3.3
0.026
35
V
DS
30 V
V
GS max
± 20
V
R
DS(on) max
(@V
GS
= 10V)
6.6
(@V
GS
= 4.5V)
9.9
Q
g typ.
9.3 nC
I
D
(@T
c(Bottom)
= 25°C)
25 A
m
Ω
Features Benefits
Low Thermal Resistance to PCB (< 3.6°C/W) Enable better thermal dissipation
Low Profile (<1.2mm) results in Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Compatible with Existin
g
Surface Mount Techniques Easier Manufacturing
RoHS Compliant Containin
g
no Lead, no Bromide and no Halo
g
en Environmentally Friendlier
MSL1, Consumer Qualification Increased Reliability
IRFH8330PbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 9, 2014
Note
Form Quantity
IRFH8330TRPBF PQFN 5mm x 6mm Tape and Reel 4000
IRFH8330TR2PBF
PQFN 5mm x 6mm Tape and Reel 400 EOL notice #259
Orderable part number Package Type Standard Pack
IRFH8330PbF
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 9, 2014
D
S
G
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
(Bottom)
Junction-to-Case
–––
3.6
R
θJC
(Top)
Junction-to-Case
–––
40
°C/W
R
θJA
Junction-to-Ambient
–––
38
R
θJA
(<10s)
Junction-to-Ambient
–––
25
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 23 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 5.3 6.6
––– 7.7 9.9
V
GS(th)
Gate Threshold Voltage 1.35 1.8 2.35 V V
DS
= V
GS
, I
D
= 25µA
∆
V
GS(th)
Gate Threshold Voltage Coefficient ––– -6.3 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
µA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 61 ––– ––– S
Q
g
Total Gate Charge ––– 20 ––– nC
Q
g
Total Gate Charge ––– 9.3 –––
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 2.7 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.6 –––
Q
gd
Gate-to-Drain Charge ––– 2.5 –––
Q
godr
Gate Charge Overdrive ––– 2.5 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 4.1 –––
Q
oss
Output Charge ––– 7.1 ––– nC
R
G
Gate Resistance ––– 1.8
–––
Ω
t
d(on)
Turn-On Delay Time ––– 9.2 –––
t
r
Rise Time ––– 15 –––
t
d(off)
Turn-Off Delay Time ––– 10 –––
t
f
Fall Time ––– 5.7 –––
C
iss
Input Capacitance –––
1450
–––
C
oss
Output Capacitance –––
250
–––
C
rss
Reverse Transfer Capacitance –––
110
–––
Avalanche Characteristics
Parameter Units
E
AS
Sin
g
le Pulse Avalanche Ener
gy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(
Bod
y
Diode
)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 14 21 ns
Q
rr
Reverse Recovery Charge ––– 23 35 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
V
GS
= 4.5V, I
D
= 16A
V
GS
= 4.5V
Typ.
–––
R
G
=1.8
Ω
V
DS
= 10V, I
D
= 20A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
mΩ
I
D
= 20A
I
D
= 20A
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 390 A/µs
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 0V
V
DS
= 25V
Conditions
Max.
52
20
ƒ = 1.0MHz
V
DS
= 24V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V
V
DD
= 30V, V
GS
= 4.5V
V
GS
= 10V, V
DS
= 15V, I
D
= 20A
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 20A
––– ––– 210
––– ––– 20
MOSFET symbol
nA
ns
A
pF
nC
V
DS
= 15V
–––
V
GS
= 20V
V
GS
= -20V
IRFH8330PbF
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 9, 2014
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
BOTTOM 2.5V
≤
60µs PULSE WIDTH
Tj = 25°C
2.5V
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.5V
≤
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
BOTTOM 2.5V
0 1 2 3 4 5 6 7 8
V
GS
, Gate-to-Source Voltage (V)
1.0
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 15V
≤
60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 20A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 5 10 15 20 25 30
Q
G
,
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
V
DS
= 15V
V
DS
= 6.0V
I
D
= 20A
P1-P3P4-P6P7-P9

IRFH8330TRPBF

Mfr. #:
Buy IRFH8330TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 30V 1 N-CH HEXFET 6.6mOhms 9.3nC
Lifecycle:
New from this manufacturer.
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