STPS30L40CG

1/6
STPS30L40CG/CT/CW
July 2003 - Ed: 4A
LOW DROP POWER SCHOTTKY RECTIFIER
®
Dual center tap schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-247, TO-220AB and D
2
PAK
these devices are intended for use in low voltage,
high frequency inverters, free-wheeling and
polarity protection applications.
DESCRIPTION
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
40 V
I
F(RMS)
RMS forward current
30 A
I
F(AV)
Average forward current Tc = 135°C
δ = 0.5
Per diode
Per device
15
30
A
I
FSM
Surge non repetitive forward current tp = 10 ms Sinusoidal
220 A
I
RRM
Repetitive peak reverse current tp=2µs square F=1kHz
1A
I
RSM
Non repetitive peak reverse current tp = 100 µs square
3A
P
ARM
Repetitive peak avalanche power tp = 1µs Tj = 25°C
6000 W
T
stg
Storage temperature range
- 65 to + 150 °C
Tj
Maximum operating junction temperature *
150 °C
dV/dt
Critical rate of rise of reverse voltage
10000 V/µs
ABSOLUTE RATINGS (limiting values, per diode)
A1
K
A2
I
F(AV)
2x15A
V
RRM
40 V
Tj (max) 150 °C
V
F
(max) 0.50 V
MAIN PRODUCTS CHARACTERISTICS
D
2
PAK
STPS30L40CG
K
A1
A2
A2
K
A1
K
A1
A2
TO-220AB
STPS30L40CT
TO-247
STPS30L40CW
*:
dPtot
dTj Rth j a
<
1
()
thermal runaway condition for a diode on its own heatsink
Obsolete Product(s) - Obsolete Product(s)
STPS30L40CG/CT/CW
2/6
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
R
*
Reverse leakage cur-
rent
Tj = 25°C V
R
=V
RRM
360 µA
Tj = 100°C
20 50 mA
V
F
*
Forward voltage drop Tj = 25°C I
F
=15A
0.55 V
Tj = 125°C I
F
=15A
0.42 0.50
Tj = 25°C I
F
=30A
0.74
Tj = 125°C I
F
=30A
0.59 0.67
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P = 0.330 x I
F(AV)
+ 0.011 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Value Unit
R
th (j-c)
Junction to case
Per diode
Total
1.60
0.85
°C/W
R
th (c)
Coupling 0.10 °C/W
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
PF(av)(W)
0 2 4 6 8 101214161820
0
2
4
6
8
10
12
IF(av)A
T
δ
=tp/T
tp
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0 25 50 75 100 125 150
0
2
4
6
8
10
12
14
16
18
IF(av)(A)
Rth(j-a)=15°C/W
Rth(j-a)=Rth(j-c)
Tamb(°C)
T
δ
=tp/T
tp
Fig. 2: Average current versus ambient
temperature (δ=0.5) (per diode).
Obsolete Product(s) - Obsolete Product(s)
STPS30L40CG/CT/CW
3/6
1E-3 1E-2 1E-1 1E+0
0
20
40
60
80
100
120
140
160
180
200
IM(A)
Tc=25°C
Tc=125°C
Tc=75°C
t(s)
IM
t
δ=0.5
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values) (per
diode).
1.0E-4 1.0E-3 1.0E-2 1.0E-1 1.0E+0
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-c)/Rth(j-c)
Single pulse
δ = 0.1
δ = 0.2
δ = 0.5
T
δ
=tp/T
tp
tp(s)
Fig. 6: Relative variation of thermal transient
impedance junction to case versus pulse duration.
0 5 10 15 20 25 30 35 40
1E-2
1E-1
1E+0
1E+1
1E+2
2E+2
IR(mA)
Tj=100°C
Tj=75°C
Tj=25°C
Tj=150°C
VR(V)
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values) (per diode).
12 51020 50
100
200
500
1000
2000
F=1MHz
Tj=25°C
C(pF)
VR(V)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
0
0.2
0.4
0.6
0.8
1
1.2
0 25 50 75 100 125 150
T (°C)
j
P(t)
P (25°C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t)
P (1µs)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Obsolete Product(s) - Obsolete Product(s)

STPS30L40CG

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
DIODE ARRAY SCHOTTKY 40V D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet