OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VS-MUR820-M3

P1-P3P4-P6P7-P7
VS-MUR820-M3
www.vishay.com
Vishay Semiconductors
Revision: 23-Nov-17
1
Document Number: 96186
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier, 8 A FRED Pt
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
VS-MUR820 is the state of the art ultrafast recovery rectifier
specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
I
F(AV)
8 A
V
R
200 V
V
F
at I
F
0.895 V
t
rr
typ. See Recovery table
T
J
max. 175 °C
Package 2L TO-220AC
Circuit configuration Single
Anode
1
3
Cathode
Base
cathode
2
2L TO-220AC
1
2
3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
RRM
200 V
Average rectified forward current I
F(AV)
Total device, rated V
R
, T
C
= 150 °C 8
ANon-repetitive peak surge current I
FSM
100
Peak repetitive forward current I
FM
Rated V
R
, square wave, 20 kHz, T
C
= 150 °C 16
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 200 - -
V
Forward voltage V
F
I
F
= 8 A - - 0.975
I
F
= 8 A, T
J
= 150 °C - - 0.895
Reverse leakage current I
R
V
R
= V
R
rated - - 5
μA
T
J
= 150 °C, V
R
= V
R
rated - - 250
Junction capacitance C
T
V
R
= 200 V - 25 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
VS-MUR820-M3
www.vishay.com
Vishay Semiconductors
Revision: 23-Nov-17
2
Document Number: 96186
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - - 35
ns
I
F
= 0.5 A, I
R
= 1.0 A, I
REC
= 0.25 A - - 25
T
J
= 25 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
-20-
T
J
= 125 °C - 34 -
Peak recovery current I
RRM
T
J
= 25 °C - 1.7 -
A
T
J
= 125 °C - 4.2 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 23 -
nC
T
J
= 125 °C - 75 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction to case
R
thJC
--3.0
°C/W
Thermal resistance,
junction to ambient
R
thJA
--50
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth, and
greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style 2L TO-220AC MUR820
1
10
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
0 1.80.4 0.8
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
1.2
0.1
0.2 0.6 1.0 1.4 1.6
0.01
0.1
1
10
100
0 100 150
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
200 25050
0.001
VS-MUR820-M3
www.vishay.com
Vishay Semiconductors
Revision: 23-Nov-17
3
Document Number: 96186
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
100
1000
1 10 100 1000
10
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
03
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
160
170
180
See note (1)
150
DC
140
130
69
Square wave (D = 0.50)
Rated V
R
applied
12
06
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
39
2
4
10
6
8
RMS limit
12
P1-P3P4-P6P7-P7

VS-MUR820-M3

Mfr. #:
Buy VS-MUR820-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 200V 8A TO-220 Fred Pt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet