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MGA-565P8-BLK

P1-P3P4-P6P7-P9P10-P12
MGA-565P8
20 dBm P
sat
High Isolation Buer Amplier
Data Sheet
Description
The MGA-565P8 is designed for use in LO chains to drive
high dynamic range passive mixers. It provides high
isolation, high gain, and consistent output power. It is
a GaAs MMIC, fabricated using Avago Technologies’ cost
effective, reliable enhancement mode PHEMT (Pseu-
domorphic High Electron Mobility Transistor)
[1]
process.
This device is housed in the LPCC 2x2 mm package. This
package oers good thermal dissipation and RF charac-
teristics.
MGA-565P8 features a saturated power of 20 dBm (with
0 dBm input power) and reverse isolation in excess of
40 dB at 2 GHz. The saturated output power can be set
between 9 dBm and 20 dBm using an external resistor,
with a corresponding adjustment in current consump-
tion.
Notes:
1. Enhancement mode technology employs a single positive V
gs
,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Conform to JEDEC reference outline MO229 for DRP-N
Pin Connections and Package Marking
Features
• Up to 3.5 GHz operating frequency
• 2:1 VSWR input and output at 2GHz
• Small package size:
2.0 x 2.0 x 0.75 mm LPCC
[3]
• MSL-1 and lead-free
• Tape-and-reel packaging option available
Specications
@ 2 GHz, V
d
= 5V, P
in
= 0 dBm
• P
sat
= 20 dBm
• I
dsat
= 67 mA
• Isolation = 42 dB
• Small Signal Gain = 22 dB
Applications
•
VCO buer amplier for Cellular/PCS or other wireless
infrastructures
Simplied Schematic
Note:
Package marking provides orientation and identication
“1B” = Device Code
“x” = Data code indicates the month of manufacture.
Pin 1
Pin 2
Pin 3
Pin 4
Pin 8
Pin 7
Pin 6
Pin 5
1Bx
Top View
Pin 8 GND
�
(Thermal/RF Gnd)
Pin 7�
(RFout/VD1)
Pin 6 (VD2)
Pin 5 (VD3)
Pin 1 GND
Pin 2 (RFin)
Pin 3 GND
Pin 4 GND
Bottom View
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
7
1, 3, 4, 8
Id
6
Rbias
Vd
5
2
LO
GND
RFout
RFin
2
MGA-565P8 Absolute Maximum Ratings
[1]
Absolute
Symbol Parameter Units Maximum
V
d
DC Supply Voltage V 8
P
diss
Total Power Dissipation
[2]
mW 448
P
in
max. RF Input Power (Vd= 5V) dBm 15
T
CH
Channel Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
θ
ch_b
Thermal Resistance
[3]
°C/W 91
ESD (Human Body Model) V 100
ESD (Machine Model) V 30
Notes:
1. Operation of this device in excess of
any one of these parameters may cause
permanent damage.
2. Board (package belly) temperature T
B
is
25°C. Derate 11 mW/°C for T
B
> 109°C.
3. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
Electrical Specications
T
A
= 25°C, Frequency = 2 GHz, R
bias
= 0Ω (unless specied otherwise)
Symbol Parameter and Test Condition Units Min. Typ. Max.
P
sat
Saturated Power at 0 dBm input Vd = 5V
[1]
dBm 18.5 20
Vd = 3V dBm 17
I
dsat
Saturation Current Vd = 5V
[1]
mA 58 67
Vd = 3V mA 45
ISL
[1]
Reverse Isolation dB 42 50
Gain
Small Signal Gain Vd = 5V
[1]
dB 20 21.8 23.5
Vd = 3V 20
I
ds
Small Signal Current (P
in
= -10 dBm) Vd = 5V
[1]
mA 33 37
Vd = 3V 27
RL
[1]
Return Loss Input dB -8
Output -10
Notes:
1. Typical value determined from a sample size of 500 parts from 3 wafers.
2. Measurement obtained using production test board described in the block diagram below. Circuit losses have been de-embedded from
actual measurements.
Figure 1. Production Test Circuit Schematic at 2 GHz.
22 pF 22 pF
8431
2 7
Buffer
Amplifier
22 pF
5V
12 nH
R
bias
+
_
1000 pF
0 Ohm
5
6
3
Product Consistency Distribution Charts at 2 GHz
[1, 2]
Notes:
1. Statistical distribution determined from a sample size of 500 parts from 3 wafers.
2. Future wafers allocated to this product may have typical values anywhere between the
minimum and maximum specication limits.
GAIN (dB)
Figure 2. Gain Distribution.�
LSL = 20.0 dB, USL = 23.5 dB.
19 23
20
21
22 24
200
160
120
80
40
0
Cpk = 1.20
Std. Dev. = 0.46
Psat (dBm)
Figure 3. Psat Distribution.�
LSL = 18.5 dBm, USL = 20.6
18 19.5
18.5
19
20 20.5 21
Cpk = 1.2
Std. Dev. = 0.2
200
160
120
80
40
0
Idsat (mA)
Figure 4. Idsat Distribution.�
LSL = 58.0 dBm, USL = 78.0 dBm.
58 70
62
66
74 78
160
120
80
40
0
Cpk = 1.12
Std. Dev. = 2.7
ISOLATION (dB)
Figure 5. Isolation Distribution.�
LSL = 42.0 dB, USL = 56.0 dB.
42 51
45
48
54 57
240�
200�
160�
120�
80�
40�
0
Cpk = 1.03
Std. Dev. = 2.0
P1-P3P4-P6P7-P9P10-P12

MGA-565P8-BLK

Mfr. #:
Buy MGA-565P8-BLK
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier 5 SV 22 dB
Lifecycle:
New from this manufacturer.
Delivery:
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