JANUARY 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP821xMD Overvoltage Protectors
TISP8211MD Absolute Maximum Ratings, T
A
= 25 °C
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Repetitive peak off-state voltage, V
GA
V0 =
DRM
120 V
Repetitive peak reverse voltage, V
GK
VV 07 =
RRM
-120
Non-repetitive peak impulse current (see Note 3)
2/10 µs (Telcordia GR-1089-CORE, 2/10 µs voltage wave shape)
5/310 µs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/21/45)
10/1000 µs (Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape)
I
PPSM
167
70
60
A
Non-repetitive peak on-state current, 50/60 Hz (see Notes 3 and 4)
100 ms
1 s
5 s
300 s
900 s
I
TSM
11
6.5
3.4
1.4
1.3
A
Junction temperature T
J
-55 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
NOTES: 3. Initially the protector must be in thermal equilibrium with T
J
= 25 °C. The surge may be repeated after the device returns to its initial
conditions.
4. These non-repetitive rated terminal currents are for the TISP8210MD and TISP8211MD together. Device (A)-terminal positive
current values are conducted by the TISP8211MD and (K)-terminal negative current values by the TISP8210MD.
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I
DRM
Repetitive peak off-state current V
D
= V
DRM
, V
GK
Aµ5-0 =
I
RRM
Repetitive peak reverse current V
R
= V
RRM
, V
GA
Aµ5V 07- =
V
(BO)
Breakover voltage dv/dt = -250 V/ms, R
SOURCE
= 300 Ω, V
GA
V28-V 08- =
I
H
Holding current (I
K
) I
T
= -1 A, di/dt = 1 A/ms, V
GA
Am051-V 08- =
I
GT
Gate trigger current (I
K
) I
T
= -5 A, t
p(g)
≥ 20 µs, V
GA
Am5V 08- =
C
O
Off-state capacitance f = 1 MHz, V
d
=1V, V
D
Fp04V 2± =
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I
DRM
Repetitive peak off-state current V
D
= V
DRM
, V
GA
Aµ50 =
I
RRM
Repetitive peak reverse current V
R
= V
RRM
, V
GK
Aµ5-V 07 =
V
(BO)
Breakover voltage dv/dt = 250 V/ms, R
SOURCE
= 300 Ω, V
GK
V28V 08 =
I
H
Holding current (I
A
) I
T
= 1 A, di/dt = -1 A/ms, V
GK
Am02V 08 =
I
GT
Gate trigger current (I
A
) I
T
= 5 A, t
p(g)
≥ 20 µs, V
GK
Am5-V 08 =
C
O
Off-state capacitance f = 1 MHz, V
d
=1V, V
D
Fp03V 2± =
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R
θ
JA
Junction to ambient thermal resistance P
tot
=0.52W, T
A
= 70 °C, 5 cm
2
W/C°061BCP 4RF ,
Recommended Operating Conditions
TISP8210MD Electrical Characteristics, T
A
= 25 °C
Thermal Characteristics
TISP8211MD Electrical Characteristics, T
A
= 25 °C
