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STN2NF10

P1-P3P4-P6P7-P9P10-P12P13-P13
Electrical characteristics STN2NF10
4/13
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250µA, V
GS
= 0
100 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating,Tc=125°C
V
DS
= 30V, Tc=125°C
1
10
1
µA
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
±100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
24V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 1.2A
0.23 0.26 Ω
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
Forward transconductance
V
DS
=15V, I
D
=1.2A
2.5 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1MHz, V
GS
=0
280
45
20
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=80V, I
D
= 6A
V
GS
=10V
(see Figure 15)
10
2.5
4
14 nC
nC
nC
STN2NF10 Electrical characteristics
5/13
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
=50V, I
D
= 2.4A
V
GS
=10V, R
G
=4.7Ω
(see Figure 14)
6
10
ns
ns
t
d(off)
t
f
Turn-off delay time
Fall time
V
DD
=50V, I
D
= 2.4A
V
GS
=10V, R
G
=4.7Ω
(see Figure 14)
20
3
ns
ns
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
2.4
17
A
A
V
SD
(2)
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
I
SD
= 2.4A, V
GS
=0
1.2 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 6A, V
DD
=10V
di/dt=100A/µs,Tj=150°C
(see Figure 19)
70
175
5
ns
nC
A
Electrical characteristics STN2NF10
6/13
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characteristics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
P1-P3P4-P6P7-P9P10-P12P13-P13

STN2NF10

Mfr. #:
Buy STN2NF10
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 100 Volt 2 Amp
Lifecycle:
New from this manufacturer.
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