2002-2012 Microchip Technology Inc. DS21364C-page 7
TC1188/TC1189
FIGURE 3-2: Functional Block Diagram.
3.4 Shutdown
The SHDN input is used to turn off the LDO P-Channel
pass MOSFET and internal bias. When shutdown, the
typical quiescent current consumed by the LDO is
0.1 nA. A logic low (< 0.4V) at the SHDN
input will
cause the device to operate in the shutdown mode. A
logic high (> 2.0V) at the SHDN
input will cause the
device to operate in the normal mode.
3.5 Current Limit
The LDO output current is monitored internal to the
TC1188/TC1189. The internal current sense will limit
the LDO output current to a typical value of 280 mA.
The current limit can range from approximately 50 mA
to 410 mA from device to device. The internal current
limit protects the device from a continuous output short
circuit.
3.6 Thermal Overload Protection
Integrated thermal protection circuitry shuts the
TC1188/TC1189 off when the internal die temperature
exceeds approximately 170°C. The regulator output
remains off until the internal die temperature drops to
approximately 150°C.
3.7 Operating Region and Power
Dissipation
The internal power dissipation to the LDO is primarily
determined by the input voltage, output voltage and
output current. The following equation is used to
approximate the worst case for power dissipation:
EQUATION
The maximum power dissipation is a function of the
maximum ambient temperature, T
A(MAX)
, the maximum
junction temperature, T
J(MAX)
, and the package thermal
resistance from junction to air,
JA
. The 5-Pin SOT23A
package has a
JA
of approximately 220°C/Watt.
EQUATION
Bandgap
Reference
MOS Driver
W
ith
I
LIMIT
Thermal
Sensor
Shutdown
Logic
Error
+
V
IN
SHDN
GND
V
OUT
PMOS Pass
GND
N
(TC1189 Only)
Amplifier
Transistor
P
D
= V
IN(MAX)
- V
OUT(MIN)
x I
LOAD(MAX)
Where:
P
D
= Worst case internal power dissipation.
V
IN(MAX)
= Maximum input voltage.
V
OUT(MIN)
= Minimum output voltage.
I
LOAD(MAX)
= Maximum output current.
P
D
= (T
J(MAX)
- T
A(MAX)
)/
JA
Where all terms are previously defined.
TC1188/TC1189
DS21364C-page 8 2002-2012 Microchip Technology Inc.
EXAMPLE 3-1:
The previously defined power dissipation equations
can be used to ensure that the regulator thermal
operation is within limits.
Given:
V
IN(MAX)
= 3.0V +10%
V
OUT(MAX)
= 2.7V - 2.5%
I
LOAD(MAX)
= 40 MA
T
J(MAX)
= 125°C
T
A(MAX)
= 55°C
Find:
1. Actual power dissipation.
2. Maximum allowable dissipation.
Actual power dissipation:
Maximum allowable power dissipation:
In this example, the TC1188/TC1189 dissipates a max-
imum of 26.7 mW below the allowable limit of 318 mW.
In a similar manner, the power dissipation equation, as
a function of V
IN
, V
OUT
and I
LOAD,
along with the power
dissipation equation, as a function of maximum junction
temperature, maximum ambient temperature and junc-
tion to air thermal resistance, can be used to calculate
maximum current and/or maximum input voltage limits.
4.0 APPLICATIONS INFORMATION
4.1 Input Capacitor
A 1 µF (or larger) capacitor is recommended to bypass
the LDO input and lower input impedance for circuit
stability when operating from batteries or high imped-
ance sources. The input capacitor can be ceramic, tan-
talum or aluminum electrolytic. For applications that
require low noise and input power supply rejection, low
effective series resistance (ESR) ceramic capacitors
are recommended over higher ESR electrolytic capac-
itors. Larger value input capacitors can be used to
improve circuit performance.
4.2 Output Capacitor
A 1 µF (minimum) capacitor is required from V
OUT
to
ground to ensure circuit stability. The output capacitor
should have an ESR greater than 0.1 ohms and less
than 2 ohm. Tantalum or aluminum electrolytic capaci-
tors are recommended. Since many aluminum electro-
lytic capacitors freeze at approximately -30°C, solid
tantalums are recommended for applications operating
below 25°C.
P
D
= V
IN(MAX)
- V
OUT(MIN)
x I
LOAD(MAX)
P
D
= ((3.0 * 1.1) - (2.7 * 0.975)) * 40 mA
P
D
= 26.7 mWatts
P
D
= (T
J(MAX)
- T
A(MAX)
)/
JA
P
D(MAX)
= (125 - 55) / 220
P
D(MAX)
= 318 mWatts.
2002-2012 Microchip Technology Inc. DS21364C-page 9
TC1188/TC1189
5.0 PACKAGING INFORMATION
5.1 Package Marking Information
2
45
31

Part Number (V) Code
TC1188-XECT 1.80 G4
TC1188-XECT 2.80 G3
TC1188-XECT 2.84 G2
TC1188-XECT 3.15 G1
TC1189-XECT 1.80 H4
TC1189-XECT 2.80 H3
TC1189-XECT 2.84 H2
TC1189-XECT 3.15 H1
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
* This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e

TC1189TECTTR

Mfr. #:
Manufacturer:
Microchip Technology
Description:
LDO Voltage Regulators 3.15V 100mA MAX8863/ 64 Pin COMP LDO
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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