Characteristics STPS20M60S
2/9 Doc ID 019045 Rev 1
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.380 x I
F(AV)
+ 0.0063 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited at
T
amb
= 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 60 V
I
F(RMS)
Forward rms current 90 A
I
F(AV)
Average forward current, δ = 0.5 T
c
= 135 °C Per package 20 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sine-wave 600 A
P
ARM
(1)
1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
Repetitive peak avalanche power T
j
= 25 °C, t
p
= 1 µs 26400 W
V
ARM
(2)
2. See Figure 12
Maximum repetitive peak
avalanche voltage
t
p
< 1 µs, T
j
< 150 °C, I
AR
< 99 A 80 V
V
ASM
(2)
Maximum single-pulse
peak avalanche voltage
t
p
< 1 µs, T
j
< 150 °C, I
AR
< 99 A 80 V
T
stg
Storage temperature range -65 to +175 °C
T
j
Maximum operating junction temperature
(3)
3. condition to avoid thermal runaway for a diode on its own heatsink
150 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case 1.0 °C/W
Table 4. Static electrical characteristics (terminals 1 and 3 short circuited)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 5 ms, δ < 2 %
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
- 30 125 µA
T
j
= 125 °C - 20 75 mA
V
F
(2)
2. Pulse test: t
p
= 380 µs, δ < 2 %
Forward voltage drop
T
j
= 25 °C
I
F
= 10 A
- 0.465 0.500
V
T
j
= 125 °C - 0.365 0.405
T
j
= 25 °C
I
F
= 20 A
- 0.520 0.565
T
j
= 125 °C - 0.450 0.505
dPtot
dTj
<
1
Rth(j-a)
