7 TSM090N03E
Taiwan Semiconductor
Document Number: DS_P0000212 2 Version: A15
THERMAL PERFORMANCE
PARAMETER SYMBOL LIMIT UNIT
Junction to Case Thermal Resistance R
ӨJC
3.1
°C/W
Junction to Ambient Thermal Resistance R
ӨJA
62
°C/W
Notes: R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air.
ELECTRICAL SPECIFICATIONS
(T
J
= 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL
MIN TYP MAX
UNIT
Static
(Note3)
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250µA BV
DSS
30 -- --
V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA V
GS(TH)
1.2 1.6 2.5 V
Gate Body Leakage V
GS
= ±20V, V
DS
= 0V I
GSS
-- -- ±10 µA
Zero Gate Voltage Drain Current
V
DS
= 30V, V
GS
= 0V
I
DSS
-- -- 1
µA
V
DS
= 24V, T
J
= 125ºC -- -- 10
Forward Transconductance
V
DS
= 10V, I
D
= 8A
g
fs
-- 9.5 -- S
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 16A
R
DS(ON)
-- 7.5 9
mΩ
V
GS
= 4.5V, I
D
= 8A
-- 9.6 14
Dynamic
(Note4)
Total Gate Charge
V
DS
= 15V, I
D
= 20A,
V
GS
= 4.5V
Q
g
-- 7.7 --
nC
Gate-Source Charge Q
gs
-- 1.9 --
Gate-Drain Charge Q
gd
-- 2.8 --
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
C
iss
-- 680 --
pF
Output Capacitance C
oss
-- 150 --
Reverse Transfer Capacitance C
rss
-- 70 --
Gate Resistance
V
GS
=0V,V
DS
=0V,
f=1MHz
R
g
-- 2.7 -- Ω
Switching
(Note5)
Turn-On Delay Time
V
DD
=15V , V
GS
=10V ,
R
G
=3.3Ω, I
D
=-15A
t
d(on)
-- 4.8 --
ns
Turn-On Rise Time t
r
-- 12.5 --
Turn-Off Delay Time t
d(off)
-- 27.6 --
Turn-Off Fall Time t
f
-- 8.2 --
Source-Drain Diode
(Note3)
Forward Voltage V
GS
= 0V, I
S
= 1A V
SD
-- -- 1 V
Continuous Drain-Source Diode
V
G
=V
D
=0V
Force Current
I
S
-- --
50
A
Pulse Drain-Source Diode
I
SM
-- --
200
A
Notes:
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. V
DD
=25V, V
GS
=10V, L=0.1mH, I
AS
=30A, R
G
=25Ω, Starting T
J
=25℃.
3. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
4. For DESIGN AID ONLY, not subject to production testing.
5. Switching time is essentially independent of operating temperature
