Nexperia
BC807W series
45 V, 500 mA PNP general-purpose transistors
BC807W_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved.
Product data sheet Rev. 7 — 3 July 2018
9 / 16
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400
200
600
800
h
FE
0
I
C
(mA)
- 10
- 1
- 10
3
- 10
2
- 1 - 10
(1)
(2)
(3)
V
CE
= -1 V
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Figure 12. BC807-40W: DC current gain as a function of
collector current; typical values
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I
C
(mA)
- 10
- 1
- 10
3
- 10
2
- 1 - 10
- 1
- 10
V
BEsat
(V)
- 10
- 1
(1)
(2)
(3)
I
C
/I
B
= 10
(1) T
amb
= -55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Figure 13. BC807-40W: Base-emitter saturation voltage
as a function of collector current; typical values
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- 10
- 1
- 10
- 2
- 1
V
CEsat
(V)
- 10
- 3
I
C
(mA)
- 10
- 1
- 10
3
- 10
2
- 1 - 10
(1)
(2)
(3)
I
C
/I
B
= 10
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Figure 14. BC807-40W: Collector-emitter saturation
voltage as a function of collector current; typical values
V
CE
(V)
0 - 5- 4- 2 - 3- 1
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- 0.4
- 0.8
- 1.2
I
C
(A)
0
(1)(2)(3)(4)(5)
(6)
(7)
(8)
(9)
(10)
T
amb
= 25 °C
(1) I
B
= -12.0 mA
(2) I
B
= -10.8 mA
(3) I
B
= -9.6 mA
(4) I
B
= -8.4 mA
(5) I
B
= -7.2 mA
(6) I
B
= -6.0 mA
(7) I
B
= -4.8 mA
(8) I
B
= -3.6 mA
(9) I
B
= -2.4 mA
(10) I
B
= -1.2 mA
Figure 15. BC807-40W: Collector current as a function
of collector-emitter voltage; typical values
