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NSR0620P2T5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 3
1 Publication Order Number:
NSR0620P2/D
NSR0620P2T5G
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0620P2 in a SOD−923 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
Features
• Very Low Forward Voltage Drop − 350 mV @ 100 mA
• Low Reverse Current − 2.0 mA @ 10 V
• Continuous Forward Current − 500 mA
• Power Dissipation with Minimum Trace − 190 mW
• Very High Switching Speed − 4.0 ns @ 10 mA
• Low Capacitance − 12 pF @ 1.0 V
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
Markets
• Mobile Handsets
• MP3 Players
• Digital Camera and Camcorders
• Notebook PCs & PDAs
• GPS
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
20 Vdc
Forward Continuous Current (DC) I
F
500 mA
Non−Repetitive Peak Forward Surge
Current
I
FSM
1.0 A
ESD Rating: Human Body Model
Machine Model
ESD Class 3B
Class C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
20 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
http://onsemi.com
Device Package Shipping†
ORDERING INFORMATION
NSR0620P2T5G SOD−923
(Pb−Free)
2 mm Pitch
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SOD−923
CASE 514AB
PLASTIC
F = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING
DIAGRAM
MG
G
1
2
12
F
NSR0620P2T5G
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
520
190
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
175
570
°C/W
mW
Junction Operating and Storage Temperature Range T
J
, T
stg
−55 to +125 °C
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Leakage
(V
R
= 10 V)
(V
R
= 20 V)
I
R
2.0
9.0
10
mA
Forward Voltage
(I
F
= 10 mA)
(I
F
= 100 mA)
(I
F
= 500 mA)
V
F
270
350
480
310
390
520
mV
Total Capacitance
(V
R
= 1.0 V, f = 1 MHz)
CT
12 pF
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R
= 1.0 mA)
t
rr
4.0 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. DC Current Source is adjusted for a Forward Current (I
F
) of 10 mA.
2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I
RM
of 10 mA.
3. Pulse Generator transition time << t
rr
.
4. I
R(REC)
is measured at 1 mA. Typically 0.1 X I
RM
or 0.25 X I
RM
.
5. t
p
» t
rr
R
L
= 50 W
Current
Transformer
DUT
750 mH
0.1 mF
50 W Output
Pulse
Generator
t
r
t
p
10%
90%
I
F
I
RM
t
rr
i
R(REC)
= 1 mA
Output Pulse
(I
F
= I
RM
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
Pulse Generator
Output
Figure 1. Recovery Time Equivalent Test Circuit
50 W Input
Oscilloscope
0.1 mF
0 V
V
R
DC Current
Source
Adjust for I
RM
+−
NSR0620P2T5G
http://onsemi.com
3
0.1
1
10
100
1000
0 0.1 0.2 0.3 0.4 0.5 0.6
V
F
, FORWARD VOLTAGE (V)
Figure 2.
25°C
85°C
125°C
−40°C
I
F
, FORWARD CURRENT (mA)
V
R
, REVERSE VOLTAGE (V)
Figure 3.
I
R
, REVERSE CURRENT (mA)
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
0 2 4 6 8 10 12 14 16 18 2
0
−40°C
25°C
85°C
125°C
2
4
6
8
10
12
14
16
18
20
22
02468101214161820
V
R
, REVERSE VOLTAGE (V)
Figure 4.
C
t
, TOTAL CAPACITANCE (pF)
P1-P3P4-P4

NSR0620P2T5G

Mfr. #:
Buy NSR0620P2T5G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 20V SCHOTTKY DIODE SOD923
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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