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TSM240N03CX RFG

P1-P3P4-P5
TSM240N03CX
30V N-Channel Power MOSFET
1/5
Version: A14
SOT
-
23
Key Parameter Performance
Parameter Value
Unit
V
DS
30 V
R
DS(on)
(max)
V
GS
= 10V
24
mΩ
V
GS
= 4.5V
34
Q
g
4.1 nC
Ordering Information
Part No. Package
Packing
TSM240N03CX RFG
SOT-23 3kpcs / 7” Reel
● Note:
“G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Block Diagram
N-Channel MOSFET
Absolute Maximum Ratings
(T
C
= 25°C unless otherwise noted)
Parameter Symbol
Limit
Unit
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
±20
V
Continuous Drain Current
T
C
= 25°C
I
D
6.5
A
T
C
= 100°C
4.1
A
Pulsed Drain Current
(Note 1)
I
DM
26
A
Single Pulse Avalanche Energy
(Note 2)
E
AS
32
mJ
Power Dissipation @ T
C
= 25°C P
D
1.56 W
Operating Junction Temperature T
J
150 °C
Storage Temperature Range T
STG
-55 to +150
°C
Thermal Performance
Parameter Symbol Limit
Unit
Thermal Resistance - Junction to Ambient R
ӨJA
80 °C/W
Pin Definition:
1. Gate
2. Source
3. Drain
TSM240N03CX
30V N-Channel Power MOSFET
2/5
Version: A14
Electrical Specifications
(T
C
= 25°C unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250µA BV
DSS
30 -- -- V
Drain-Source On-State Resistance
V
GS
= 10V, I
D
= 6A
R
DS(on)
--
17 24
mΩ
V
GS
= 4.5V, I
D
= 4A
--
22 34
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA V
GS(TH)
1.2 1.4 2.5
V
Zero Gate Voltage Drain Current
V
DS
= 30V, V
GS
= 0V
I
DSS
-- -- 1
µA
V
DS
= 24V, T
J
= 125°C -- -- 10
Gate Body Leakage V
GS
= ±20V, V
DS
= 0V I
GSS
-- -- ±100
µA
Forward Transconductance
(Note 3)
V
DS
= 10V, I
D
= 4A g
fs
-- 6.5 -- S
Dynamic
Total Gate Charge
(Note 3,4)
V
DS
= 15V, I
D
= 6A,
V
GS
= 4.5V
Q
g
--
4.1
--
nC
Gate-Source Charge
(Note 3,4)
Q
gs
--
1
--
Gate-Drain Charge
(Note 3,4)
Q
gd
--
2.1
--
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
iss
--
345
--
pF
Output Capacitance C
oss
--
55
--
Reverse Transfer Capacitance C
rss
--
32
--
Switching
Turn-On Delay Time
(Note 3,4)
V
DD
= 15V, I
D
= 1A,
V
GS
= 10V, R
G
= 6Ω
t
d(on)
--
2.8
--
ns
Turn-On Rise Time
(Note 3,4)
t
r
--
7.2
--
Turn-Off Delay Time
(Note 3,4)
t
d(off)
--
15.8
--
Turn-Off Fall Time
(Note 3,4)
t
f
--
4.6
--
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
Diode Forward Current
Integral reverse diode in
the MOSFET
I
S
-- --
6.5
A
Maximum Pulse Drain-Source Diode
Forward Current
I
SM
-- --
26
A
Diode-Source Forward Voltage V
GS
= 0V, I
S
= 1A V
SD
-- --
1
V
Note:
1. Pulse width limited by safe operating area
2. L = 1mH, I
AS
= 8A, V
DD
= 25V, R
G
= 25Ω, Starting T
J
= 25°C
3. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%
4. Switching time is essentially independent of operating temperature.
TSM240N03CX
30V N-Channel Power MOSFET
3/5
Version: A14
Electrical Characteristics Curve
Continuous Drain Current vs. T
C
Gate Charge
On-Resistance vs. Junction Temperature
Threshold Voltage vs. Junction Temperature
Maximum Safe Operating Area
Normalized Thermal Transient Impedance Curve
I
D
, Continuous Drain Current (A)
T
C
, Case Temperature (°C)
V
GS
,
Gate to Source Voltage (V)
Qg, Gate Charge (nC)
Normalized On Resistance (m
W
)
T
J
, Junction Temperature (°C)
Normalized Gate Threshold Voltage (V)
T
J
, Junction Temperature (°C)
I
D,
Continuous Drain Current (A)
V
DS
, Drain to Source Voltage (V)
Normalized Thermal Response (R
ΘJA
)
Square Wave Pulse Duration (s)
P1-P3P4-P5

TSM240N03CX RFG

Mfr. #:
Buy TSM240N03CX RFG
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET 30V N Channel Power Mosfet
Lifecycle:
New from this manufacturer.
Delivery:
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