NLU1G86AMUTCG

© Semiconductor Components Industries, LLC, 2016
August, 2016 Rev. 3
1 Publication Order Number:
NLU1G86/D
NLU1G86
Single 2-Input Exclusive OR
Gate
The NLU1G86 MiniGatet is an advanced highspeed CMOS
2input Exclusive OR gate in ultrasmall footprint.
The NLU1G86 input and output structures provide protection when
voltages up to 7.0 V are applied, regardless of the supply voltage.
Features
High Speed: t
PD
= 3.5 ns (Typ) @ V
CC
= 5.0 V
Low Power Dissipation: I
CC
= 1 mA (Max) at T
A
= 25°C
Power Down Protection Provided on inputs
Balanced Propagation Delays
Overvoltage Tolerant (OVT) Input and Output Pins
UltraSmall Packages
These are PbFree Devices
V
CC
IN B
IN A
OUT YGND
1
2
3
5
4
IN A
OUT Y
= 1
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
6
NC
IN B
PIN ASSIGNMENT
1
2
3 GND
IN B
IN A
4
5NC
OUT Y
FUNCTION TABLE
L
L
H
H
AY
L
H
H
L
6V
CC
Input Output
B
L
H
L
H
MARKING
DIAGRAMS
4 = Device Marking
M = Date Code
www.onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
UDFN6
1.2 x 1.0
CASE 517AA
UDFN6
1.45 x 1.0
CASE 517AQ
UDFN6
1.0 x 1.0
CASE 517BX
1
X M
1
X M
1
X M
NLU1G86
www.onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage 0.5 to +7.0 V
V
IN
DC Input Voltage 0.5 to +7.0 V
V
OUT
DC Output Voltage 0.5 to +7.0 V
I
IK
DC Input Diode Current V
IN
< GND 20 mA
I
OK
DC Output Diode Current V
OUT
< GND ±20 mA
I
O
DC Output Source/Sink Current ±12.5 mA
I
CC
DC Supply Current Per Supply Pin ±25 mA
I
GND
DC Ground Current per Ground Pin ±25 mA
T
STG
Storage Temperature Range 65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias 150 °C
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5) ±500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22A114A.
3. Tested to EIA / JESD22A115A.
4. Tested to JESD22C101A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Positive DC Supply Voltage 1.65 5.5 V
V
IN
Digital Input Voltage 0 5.5 V
V
OUT
Output Voltage 0 5.5 V
T
A
Operating FreeAir Temperature 55 +125 °C
Dt/DV
Input Transition Rise or Fall Rate V
CC
= 3.3 V ± 0.3 V
V
CC
= 5.0 V ± 0.5 V
0
0
100
20
ns/V
NLU1G86
www.onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions
V
CC
(V)
T
A
= 25 5C T
A
= +855C
T
A
= 555C to
+1255C
Unit
Min Typ Max Min Max Min Max
V
IH
LowLevel
Input Voltage
1.65 0.75 x
V
CC
0.75 x
V
CC
V
2.3 to
5.5
0.70 x
V
CC
0.70 x
V
CC
V
IL
LowLevel
Input Voltage
1.65 0.25 x
V
CC
0.25 x
V
CC
0.25 x
V
CC
V
2.3 to
5.5
0.30 x
V
CC
0.30 x
V
CC
0.30 x
V
CC
V
OH
HighLevel
Output Voltage
V
IN
= V
IH
or V
IL
I
OH
= 50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
V
IN
= V
IH
or V
IL
I
OH
= 4 mA
I
OH
= 8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
OL
LowLevel
Output Voltage
V
IN
= V
IH
or V
IL
I
OL
= 50 mA
2.0
3.0
4.5
0
0
0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
I
IN
Input Leakage
Current
0 v V
IN
v 5.5 V 0 to
5.5
±0.1 ±1.0 ±1.0
mA
I
CC
Quiescent
Supply Current
0 v V
IN
v V
CC
5.5 1.0 10 40
mA
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0 nS)
Symbol
Parameter
V
CC
(V)
Test Condition
T
A
= 25 5C T
A
= +855C
T
A
= 555C to
+1255C
Unit
Min Typ Max Min Max Min Max
t
PLH
,
t
PHL
Propagation
Delay,
Input A or B to
Output Y
3.0 to
3.6
C
L
= 15 pF 4.4 11 13 15.5
ns
C
L
= 50 pF 5.7 14.5 16.5 19.5
4.5 to
5.5
C
L
= 15 pF 3.5 6.8 8.0 10
C
L
= 50 pF 4.2 8.8 10 12
C
IN
Input
Capacitance
5.5 10 10 10 pF
C
PD
Power
Dissipation
Capacitance
(Note 6)
5.0 10 pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation I
CC(OPR)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the noload
dynamic power consumption: P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC.

NLU1G86AMUTCG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Logic Gates SNGL 2-INPUT
Lifecycle:
New from this manufacturer.
Delivery:
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