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NL17SZ16XV5T2

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 11
1 Publication Order Number:
NL17SZ16/D
NL17SZ16
Single Input Buffer
The NL17SZ16 is a single input Buffer in two tiny footprint
packages. The device performs much as LCX multi−gate products in
speed and drive.
Features
• Tiny SOT−353 and SOT−553 Packages
• Source/Sink 24 mA at 3.0 Volts
• Over−Voltage Tolerant Inputs and Outputs
• Chip Complexity: FETs = 20
• Designed for 1.65 V to 5.5 V V
CC
Operation
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
1
Y
A
V
CC
NC
A
1
2
3
5
4
GND
Y
PIN ASSIGNMENT
1
2
3 GND
NC
IN A
4
5V
CC
OUT Y
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
FUNCTION TABLE
L
A Input Y Output
L
MARKING
DIAGRAMS
SOT−553
XV5 SUFFIX
CASE 463B
LR M G
G
1
5
1
5
Pin Function
HH
www.onsemi.com
LR = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
LR MG
G
SC−88A
(SC−70−5/SOT−353)
DF SUFFIX
CASE 419A
1
5
NL17SZ16
www.onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Units
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
I
DC Input Voltage Output in High or Low State (Note 2) −0.5 ≤ V
I
≤ +7.0 V
V
O
DC Output Voltage V
I
< GND −0.5 ≤ V
O
≤ +7.0 V
I
IK
DC Input Diode Current V
O
< GND −50 mA
I
OK
DC Output Diode Current −50 mA
I
OUT
DC Output Sink Current ±50 mA
I
CC
DC Supply Current per Supply Pin ±100 mA
I
GND
DC Ground per Supply Pin ±100 mA
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias +150 °C
q
JA
Thermal Resistance SOT−353
SOT−553
350
360
°C/W
P
D
Power Dissipation in Still Air at 85°C SOT−353
SOT−553
150
180
mW
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
ESD ESD Classification Human Body Model (Note 3)
Machine Model (Note 4)
Charged Device Model (Note 5)
2000
200
N/A
V
I
Latchup
Latchup Performance Above V
CC
and Below GND at 85°C (Note 6) $100 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. I
O
Absolute Maximum Rating Must be Obtained.
3. Tested to EIA/JESD22−A114−A, rated to EIA/JESD22−A114−B.
4. Tested to EIA/JESD22−A115−A, rated to EIA/JESD22−A115−A.
5. Tested to JESD22−C101−A.
6. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Units
V
CC
DC Supply Voltage Operations Only
Data Retention
1.65
1.5
5.5
5.5
V
V
IN
DC Input Voltage 0 5.5 V
V
OUT
DC Output Voltage 0 5.5 V
T
A
Operating Temperature Range −55 +125 °C
t
r
, t
f
Input Rise and Fall Time V
CC
= 2.5 V ±0.2 V
V
CC
= 3.0 V ±0.3 V
V
CC
= 5.0 V ±0.5 V
0
0
0
20
10
5
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NL17SZ16
www.onsemi.com
3
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
NORMALIZED FAILURE RATE
TIME, YEARS
T
J
= 130°C
T
J
= 120°C
T
J
= 110°C
T
J
= 100°C
T
J
= 90°C
T
J
= 80°C
DC ELECTRICAL CHARACTERISTICS
Symbo
l
Parameter Condition
V
CC
(V)
T
A
= 255C −555C 3 T
A
3 1255C
Units
Min Typ Max Min Max
V
IH
High−Level Input Voltage 1.65 to 1.95
2.3 to 5.5
0.75 V
CC
0.7 V
CC
0.75 V
CC
0.7 V
CC
V
V
IL
Low−Level Input Voltage 1.65 to 1.95
2.3 to 5.5
0.25 V
CC
0.3 V
CC
0.25 V
CC
0.3 V
CC
V
V
OH
High−Level Output Voltage
V
IN
= V
IL
or V
IH
I
OH
= −100 mA
I
OH
= −3 mA
I
OH
= −8 mA
I
OH
= −12 mA
I
OH
= −16 mA
I
OH
= −24 mA
I
OH
= −32 mA
1.65 to 5.5
1.65
2.3
2.7
3.0
3.0
4.5
V
CC
− 0.1
1.29
1.9
2.2
2.4
2.3
3.8
V
CC
1.52
2.1
2.4
2.7
2.5
4.0
V
CC
− 0.1
1.29
1.9
2.2
2.4
2.3
3.8
V
V
OL
Low−Level Output Voltage
V
IN
= V
IH
or V
OH
I
OL
= 100 mA
I
OL
= 4 mA
I
OL
= 8 mA
I
OL
= 12 mA
I
OL
= 16 mA
I
OL
= 24 mA
I
OL
= 32 mA
1.65 to 5.5
1.65
2.3
2.7
3.0
3.0
4.5
0.0
0.08
0.20
0.22
0.28
0.38
0.42
0.1
0.24
0.3
0.4
0.4
0.55
0.55
0.1
0.24
0.3
0.4
0.4
0.55
0.55
V
I
IN
Input Leakage Current V
IN
= 5.5 V or GND 0 to 5.5 ±0.1 ±1.0
mA
I
OFF
Power Off Leakage
Current
V
IN
= 5.5 V or
V
OUT
= 5.5 V
0 1 10
mA
I
CC
Quiescent Supply Current V
IN
= 5.5 V or GND 5.5 1 10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS t
R
= t
F
= 3.0 ns
Symbo
l
Parameter Condition
V
CC
(V)
T
A
= 255C −555C 3 T
A
3 1255C
Units
Min Typ Max Min Max
t
PLH
t
PHL
Propagation Delay
(Figure 4 and 5)
R
L
= 1 MW, C
L
= 15 pF
1.65
1.8
2.5 ± 0.2
3.3 ± 0.3
5.0 ± 0.5
2.0
2.0
0.8
0.5
0.5
5.3
4.4
2.9
2.1
1.8
11.4
9.5
6.5
4.5
3.9
2.0
2.0
0.8
0.5
0.5
12
10
7.0
4.7
4.1
ns
R
L
= 500 W, C
L
= 50 pF
3.3 ± 0.3
5.0 ± 0.5
1.5
0.8
2.9
2.4
5.0
4.3
1.5
0.8
5.2
4.5
P1-P3P4-P6

NL17SZ16XV5T2

Mfr. #:
Buy NL17SZ16XV5T2
Manufacturer:
ON Semiconductor
Description:
IC BUF NON-INVERT 5.5V SOT553
Lifecycle:
New from this manufacturer.
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