AON2707
Symbol Min Typ Max Units
BV
DSS
-30 V
V
DS
=-30V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±10 µ
V
GS(th)
Gate Threshold Voltage
-0.7 -1.05 -1.5 V
I
D(ON)
-15 A
97 117
T
J
=125°C 138 165
110 138 mΩ
148 193 mΩ
g
FS
9 S
V
SD
-0.8 -1 V
I
S
-3.2 A
C
iss
305 pF
C
oss
42 pF
C
rss
26 pF
R
g
8.5 17 Ω
Q
g(10V)
6.8 12 nC
Q
g(4.5V)
3.2 6 nC
Q
gs
0.75 nC
Q
gd
1.2 nC
t
D(on)
6.0 ns
t
r
5 ns
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250µA, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-4A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=-15V, f=1MHz
SWITCHING PARAMETERS
V
DS
=V
GS,
I
D
=-250µA
V
DS
=0V, V
GS
=±12V
Gate-Body leakage current
Forward Transconductance
R
DS(ON)
I
S
=-1A,V
GS
=0V
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
µA
Zero Gate Voltage Drain Current
V
DS
=-5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-1A
Diode Forward Voltage
Turn-On Rise Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
Static Drain-Source On-Resistance
mΩ
Total Gate Charge
V
GS
=-4.5V, I
D
=-2A
V
GS
=-10V, V
DS
=-15V, R
L
=3.75Ω,
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-10V, V
DS
=-15V, I
D
=-4A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Turn-On DelayTime
D(off)
t
f
6.5 ns
t
rr
15 ns
Q
rr
6
nC
SCHOTTKY PARAMETERS
V
F
0.4 0.45
V
0.05
10
0.1
20
C
T
34
pF
t
rr
11 14
ns
Q
rr
0.8 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
I
F
=-4A, dI/dt=100A/µs
GEN
Turn-Off Fall Time
mA
V
R
=5V, T
J
=125°C
Body Diode Reverse Recovery Charge
I
F
=-4A, dI/dt=100A/µs
Forward Voltage Drop
I
F
=1A
I
rm
Maximum reverse leakage current
V
R
=5V
Schottky Reverse Recovery Charge
I
F
=1A, dI/dt=100A/µs
Junction Capacitance
V
R
=10V
Schottky Reverse Recovery Time
I
F
=1A, dI/dt=100A/µs
I
rm
Maximum reverse leakage current
V
R
=16V
mA
V
R
=16V, T
J
=125°C
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedance from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev0: Dec. 2012 www.aosmd.com
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