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STK531U394A-E

P1-P3P4-P6P7-P9P10-P12P13-P13
© Semiconductor Components Industries, LLC, 2016 1 Publication Order Number :
December 2016 - Rev. 2 STK531U394A-E/D
ORDERING INFORMATION
See detailed ordering and shipping information on page 13 of this data sheet.
www.onsemi.com
STK531U394A-E
Intelligent Power Module (IPM)
600 V, 15 A
Overview
This “Inverter IPM” is highly integrated device containing all High
Voltage (HV) control from HV-DC to 3-phase outputs in a single SIP
module (Single-In line Package). Output stage uses IGBT / FRD
technology and implements Under Voltage Protection (UVP) and Over
Current Protection (OCP) with a Fault Detection output flag. Internal
Boost diodes are provided for high side gate boost drive.
Function
Single control power supply due to Internal bootstrap circuit for high
side pre-driver circuit
All control input and status output are at low voltage levels directly
compatible with microcontrollers
Built-in cross conduction prevention
Externally accessible embedded thermistor for substrate temperature
measurement
The level of the over current protection is adjustable with the external
resistor, “RSD”
Certification
UL Recognized (File number : E339285)
Specifications
Absolute Maximum Ratings
at Tc = 25C
Parameter Symbol Remarks Ratings Unit
Supply voltage
V
CC
P to N, surge < 500 V *1 450 V
Collector-emitter voltage
V
CE
P to U, V, W or U, V, W, to N 600 V
Output current Io
P, N, U, V, W terminal current ±15 A
P, N, U, V, W terminal current at Tc = 100C
±7 A
Output peak current Iop P, N, U, V, W terminal current, PW = 1 ms ±30 A
Pre-driver voltage VD1, 2, 3, 4
VB1 to U, VB2 to V, VB3 to W, V
DD
to V
SS
*2
20 V
Input signal voltage VIN HIN1, 2, 3, LIN1, 2, 3
0.3 to V
DD
V
FAULT terminal voltage VFAULT FAULT terminal
0.3 to V
DD
V
Maximum power dissipation Pd IGBT per 1 channel 35 W
Junction temperature Tj IGBT, FRD 150
C
Storage temperature Tstg
40 to +125 C
Operating case temperature Tc IPM case temperature
20 to +100 C
Tightening torque A screw part *3 0.9 Nm
Isolation voltage Vis 50 Hz sine wave AC 1 minute *4 2000 VRMS
Reference voltage is “V
SS
” terminal voltage unless otherwise specified.
*1 : Surge voltage developed by the switching operation due to the wiring inductance between P and N terminal.
*2 : VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = V
DD
to V
SS
terminal voltage.
*3 : Flatness of the heat-sink should be lower than 0.15mm.
*4 : Test conditions : AC 2500 V, 1 second.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
PACKAGE PICTURE
SIP29 44x26.5
STK531U394A-E
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2
Electrical Characteristics at Tc = 25C, VD1, VD2, VD3, VD4 = 15 V
Parameter Symbol Conditions
Tes t
circuit
MIN TYP MAX Unit
Power output section
Collector-emitter cut-off current
I
CE
V
CE
= 600 V
Fig.1
- - 0.1 mA
Bootstrap diode reverse current IR(BD) VR(BD) = 600 V - - 0.1 mA
Collector to emitter saturation
voltage
V
CE
(SAT)
Ic = 15 A
Tj = 25C
Upper side
Fig.2
- 1.8 2.3
V
Lower side *1 - 2.2 2.7
Ic = 7 A
Tj = 100C
Upper side - 1.5 -
Lower side *1 - 1.7 -
Diode forward voltage
V
F
IF = 15 A
Tj = 25C
Upper side
Fig.3
- 1.8 2.1
V
Lower side *1 - 2.0 3.3
IF = 7 A
Tj = 100C
Upper side - 1.4 -
Lower side *1 - 1.6 -
Junction to case
thermal resistance
θj-c(T) IGBT
-
- - 3.8
C/W
θj-c(D) FWD - - 6.0
Control (Pre-driver) section
Pre-driver current consumption ID
VD1, 2, 3 = 15 V
Fig.4
- 0.08 0.4
mA
VD4 = 15 V - 1.6 4.0
High level Input voltage
Vin H
HIN1, HIN2, HIN3,
LIN1, LIN2, LIN3 to V
SS
2.5 - - V
Low level Input voltage
Vin L
- - 0.8 V
Input threshold voltage hysteresis
*2
Vinth(hys)
0.5 0.8 - V
Logic 1 input leakage current
I
IN+
VIN = +3.3 V
- 100 143 µA
Logic 0 input leakage current
I
IN
VIN = 0 V
- - 2 µA
FAULT terminal sink current IoSD FAULT : ON / VFAULT = 0.1 V - 2 - mA
FAULT clear time FLTCLR Fault output latch time 18 - 80 ms
V
CC
and VS undervoltage
positive going threshold
V
CCUV+
V
SUV+
10.5 11.1 11.7 V
V
CC
and VS undervoltage
negative going threshold
V
CCUV-
V
SUV-
10.3 10.9 11.5 V
V
CC
and VS undervoltage
hysteresis
V
CCUVH
V
SUVH-
0.14 0.2 - V
Over current protection level ISD PW = 100 μs, RSD = 0 Ω Fig.5 22.0 - 27.8 A
Electric current output signal level ISO Io = 15 A - 0.36 0.38 0.40 V
Reference voltage is “V
SS
” terminal voltage unless otherwise specified.
*1 : The lower side’s V
CE
(SAT) and VF include a loss by the shunt resistance
*2 : Input threshold voltage hysteresis indicates a reference value based on the design value of built-in pre-driver IC
Electrical Characteristics at Tc 25C, VD1, VD2, VD3, VD4 = 15 V, V
CC
= 300 V, L = 3.9 mH
Parameter Symbol Conditions
Tes t
circuit
MIN TYP MAX Unit
Switching time
tON
Io = 15 A
Fig.6
0.3 0.5 1.2
µs
tOFF - 0.8 1.5
Turn-on switching loss Eon
Io = 7 A
- 220 - µJ
Turn-off switching loss Eoff - 180 -
µJ
Total switching loss Etot - 400 -
µJ
Turn-on switching loss Eon
Io = 15 A, Tc = 100C
- 260 -
µJ
Turn-off switching loss Eoff - 220 -
µJ
Total switching loss Etot - 480 -
µJ
Diode reverse recovery energy Erec
IF = 7 A, P = 400 V,
Tc = 100C
- 25 -
µJ
Diode reverse recovery time trr
- 90 - ns
Reverse bias safe operating area RBSOA
Io = 30 A, V
CE
= 450 V
Full square
Short circuit safe operating area SCSOA
V
CE
= 400 V, Tc = 100C
4 - - µs
Reference voltage is “V
SS
” terminal voltage unless otherwise specified.
Notes :
1. The pre-drive power supply low voltage protection has approximately 0.2 V of hysteresis and operates as follows.
Upper side : The gate is turned off and will return to regular operation when recovering to the normal voltage, but the latch will continue
till the input signal will turn ‘high’.
Lower side : The gate is turned off and will automatically reset when recovering to normal voltage. It does not depend on input signal voltage.
2. The pre-drive low voltage protection is the feature to protect devices when the pre-driver supply voltage falls due to an operating
malfunction.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
STK531U394A-E
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3
Equivalent Block Diagram
VB3(1)
W,VS3(2)
V,VS2(6)
VB2(5)
VB1(9)
U,VS1(10)
P (13)
N (16)
FAULT(23)
HIN1(17)
HIN2(18)
HIN3(19)
LIN1(20)
LIN2(21)
LIN3(22)
ISD(27)
ISO(24)
VDD(25)
VSS(26)
Level
Shifter
Logic
Logic
Logic
Latch
Over-Current
Thermistor
Shifter Shifter
Level
Level
U.V. U.V. U.V.
BD
BD BD
RCIN(28)
TH(29)
VDD-UnderVoltage
Shunt-Resistor
Latch time
Latch time is 18 ms to 80 ms
(Automatic reset)
P1-P3P4-P6P7-P9P10-P12P13-P13

STK531U394A-E

Mfr. #:
Buy STK531U394A-E
Manufacturer:
ON Semiconductor
Description:
Motor / Motion / Ignition Controllers & Drivers INVERTER
Lifecycle:
New from this manufacturer.
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