NXP Semiconductors
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
PMGD290UCEA All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 28 March 2014 8 / 21
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
TR1 (N-channel), Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C 20 - - V
V
GSth
gate-source threshold
voltage
I
D
= 250 µA; V
DS
= V
GS
; T
j
= 25 °C 0.5 0.75 0.95 V
V
DS
= 20 V; V
GS
= 0 V; T
j
= 25 °C - - 1 µAI
DSS
drain leakage current
V
DS
= 20 V; V
GS
= 0 V; T
j
= 150 °C - - 10 µA
V
GS
= 8 V; V
DS
= 0 V;
-40 °C < T
j
< 150 °C
- - 10 µAI
GSS
gate leakage current
V
GS
= -8 V; V
DS
= 0 V;
-40 °C < T
j
< 150 °C
- - -10 µA
V
GS
= 4.5 V; I
D
= 500 mA; T
j
= 25 °C - 290 380 mΩ
V
GS
= 4.5 V; I
D
= 500 mA; T
j
= 150 °C - 460 610 mΩ
V
GS
= 2.5 V; I
D
= 200 mA; T
j
= 25 °C - 420 620 mΩ
R
DSon
drain-source on-state
resistance
V
GS
= 1.8 V; I
D
= 10 mA; T
j
= 25 °C - 0.6 1.1 Ω
g
fs
transfer conductance V
DS
= 10 V; I
D
= 200 mA; T
j
= 25 °C - 1.6 - S
TR1 (N-channel), Dynamic characteristics
Q
G(tot)
total gate charge - 0.45 0.68 nC
Q
GS
gate-source charge - 0.15 - nC
Q
GD
gate-drain charge
V
DS
= 10 V; I
D
= 500 mA; V
GS
= 4.5 V;
T
j
= 25 °C
- 0.15 - nC
C
iss
input capacitance - 55 83 pF
C
oss
output capacitance - 15 - pF
C
rss
reverse transfer
capacitance
V
DS
= 10 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 7 - pF
t
d(on)
turn-on delay time - 6 12 ns
t
r
rise time - 4 - ns
t
d(off)
turn-off delay time - 86 172 ns
t
f
fall time
V
DS
= 10 V; R
L
= 250 Ω; V
GS
= 4.5 V;
R
G(ext)
= 6 Ω; T
j
= 25 °C
- 31 - ns
TR1 (N-channel), Source-drain diode characteristics
V
SD
source-drain voltage I
S
= 300 mA; V
GS
= 0 V; T
j
= 25 °C 0.48 0.77 1.2 V
TR2 (P-channel), Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= -250 µA; V
GS
= 0 V; T
j
= 25 °C -20 - - V
