MITSUBISHI <INTELLIGENT POWER MODULES>
PM50RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
May 2009
3
Parameter
Symbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Condition
V
CC(surge)
Tstg
Viso
Ratings
V
CC(PROT)
800
1000
–40 ~ +125
2500
Unit
V
°C
V
rms
V
V
D = 13.5 ~ 16.5V
Inverter Part, T
j = +125°C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
2.15
2.35
3.3
2.0
0.8
1.0
2.8
1.2
1
10
Min. Typ. Max.
Collector-Emitter Saturation
Voltage
Collector-Emitter Cutoff
Current
–I
C = 50A, VD = 15V, VCIN = 15V (Fig. 2)
T
j = 25°C
T
j = 125°C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Condition
V
CE(sat)
ICES
VEC
ton
trr
tc(on)
toff
tc(off)
Limits
—
—
—
0.3
—
—
—
—
—
—
1.65
1.85
2.3
0.8
0.3
0.4
1.2
0.4
—
—
T
j = 25°C
T
j = 125°C
FWDi Forward Voltage
Switching Time
V
D = 15V, VCIN = 0V↔15V
V
CC = 600V, IC = 50A
T
j = 125°C
Inductive Load (Fig. 3,4)
V
CE
= V
CES
, V
D
= 15V
(Fig. 5)
V
D = 15V, IC = 50A
V
CIN = 0V, Pulsed (Fig. 1)
TOTAL SYSTEM
V
mA
V
µs
Unit
0.27
0.47
0.39
0.67
0.038
°C/W
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Inverter IGBT part (per 1 element) (Note-1)
Inverter FWDi part (per 1 element) (Note-1)
Brake IGBT part (Note-1)
Brake FWDi upper part (Note-1)
Case to fin, (per 1 module)
Thermal grease applied (Note-1)
Symbol
Condition
Unit
Min.
—
—
—
—
—
—
—
—
—
—
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
(Note-1) T
C (under the chip) measurement point is below.
Parameter
Limits
Typ. Max.
UP
IGBT
28.6
–8.4
VP WP UN VN WN BR
FWDi
28.6
0.2
IGBT
65.4
–8.4
FWDi
65.4
0.2
IGBT
87.4
–8.4
FWDi
87.4
0.2
IGBT
38.6
6.8
FWDi
38.6
–1.8
IGBT
54.6
6.8
FWDi
54.6
–1.8
IGBT
76.6
6.8
FWDi
76.6
–1.8
IGBT
18.0
–8.9
Di
19.3
5.0
arm
axis
X
Y
(unit : mm)
Bottom view
* If you use this value, Rth(f-a) should be measured just under the chips.