NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 2 JUNE 94
FEATURES
* 160 Volt V
CEO
* 1 Amp continuous current
* Gain of 5K at I
C
=1 Amp
*P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX600 ZTX601 UNIT
Collector-Base Voltage V
CBO
160 180 V
Collector-Emitter Voltage V
CEO
140 160 V
Emitter-Base Voltage V
EBO
10 V
Peak Pulse Current I
CM
4A
Continuous Collector Current I
C
1A
Power Dissipation at T
amb
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL ZTX600 ZTX601 UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
160 180 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
140 160 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10 10 V
I
E
=100µA
Collector Cut-Off
Current
I
CBO
0.01
10
0.01
10
µA
µA
µA
µA
V
CB
=140V
V
CB
=160V
V
CB
=140V,T =100°C
V
CB
=160V,T =100°C
Emitter Cut-Off
Current
I
EBO
0.1 0.1
µA
V
EB
=8V
Colllector-Emitter
Cut-Off Current
I
CES
10
10
µA
µA
V
CES
=140V
V
CES
=160V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.75
0.85
1.1
1.2
0.75
0.85
1.1
1.2
V
V
I
C
=0.5A, I
B
=5mA*
I
C
=1A, I
B
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.7 1.9 1.7 1.9 V I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.5 1.7 1.5 1.7 V IC=1A, V
CE
=5V*
E-Line
TO92 Compatible
ZTX600
ZTX601
3-206
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL ZTX600 ZTX601 UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Static Forward
Current Transfer
Ratio
Group A
Group B
h
FE
1K
2K
1K
100K
1K
2K
1K
100K
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
1K
2K
1K
2K
5K
3K
20K
1K
2K
1K
2K
5K
3K
20K
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
5K
10K
5K
10K
20K
10K
100K
5K
10K
5K
10K
20K
10K
100K
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
Transition
Frequency
f
T
150 250 150 250 MHz I
C
=100mA,
V
CE
=10V f=20MHz
Input Capacitance C
ibo
60 90 60 90 pF V
EB
=0.5V, f=1MHz
Output
Capacitance
C
obo
10 15 10 15 pF V
CE
=10V, f=1MHz
Switching Times t
on
0.75 0.75
µs
I
C
=0.5A, V
CE
=10V
I
B1
=I
B2
=0.5mA
t
off
2.2 2.2
µs
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
The maximum permissible operational temperature can be obtained from this graph using the
following equation
T
( )
=
Power (max )
− Power (act)
0.0057
+25° C
T
amb(max )
= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V
CE
and source resistance (R
S
)
Power(actual)= Actual power dissipation in users circuit
C
B
E
ZTX600
ZTX601
Voltage Derating Graph
V
CE
- Collector-Emitter Voltage (Volts)
1.0
0.8
0.6
0.4
0
0.2
R = 5K
Ω
1 10 100
DC Conditions
R = 50K
Ω
R =
∞
Maximum Power Dissipation (W)
200
R = 1M
Ω
3-207
