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NTR4171PT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2007
October, 2016 − Rev. 2
1 Publication Order Number:
NTR4171P/D
NTR4171P
Power MOSFET
−30 V, −3.5 A, Single P−Channel, SOT−23
Features
• Low R
DS(on)
at Low Gate Voltage
• Low Threshold Voltage
• High Power and Current Handling Capability
• This is a Pb−Free Device
Applications
• Load Switch
• Optimized for Battery and Load Management Applications in
Portable Equipment like Cell Phones, PDA’s, Media Players, etc.
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
−30 V
Gate−to−Source Voltage V
GS
±12 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
−2.2
A
T
A
= 85°C −1.5
t ≤ 5 s T
A
= 25°C −3.5
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
0.48
W
t ≤ 5 s 1.25
Pulsed Drain Current
t
p
=10 ms
I
DM
−15.0 A
Operating Junction and Storage Temperature T
J
,
T
stg
−55 to
150
°C
Source Current (Body Diode) I
S
−1.0 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
260
°C/W
Junction−to−Ambient − t ≤ 10 s (Note 1)
R
q
JA
100
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
G
S
D
Device Package Shipping
†
ORDERING INFORMATION
www.onsemi.com
−30 V 110 mW @ −4.5 V
75 mW @ −10 V
R
DS(on)
MAX
−2.2 A
I
D
MAXV
(BR)DSS
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
2
3
1
3
Drain
1
Gate
2
Source
P−CHANNEL MOSFET
NTR4171PT1G SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
150 mW @ −2.5 V
TRFMG
G
TRF = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
−1.8 A
−1.0 A
NTR4171PT3G SOT−23
(Pb−Free)
10000/Tape & Reel
NTR4171P
www.onsemi.com
2
MOSFET ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= −250 mA, Reference to 25°C
24 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= −24 V, T
J
= 25°C
V
GS
= 0 V, V
DS
= −24 V, T
J
= 85°C
−1.0
−5.0
mA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "12 V ±0.1
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−0.7 −1.15 −1.4 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
3.5 mV/°C
Drain−to−Source On−Resistance R
DS(on)
V
GS
= −10 V, I
D
= −2.2 A 50 75
mW
V
GS
= −4.5 V, I
D
= −1.8 A 60 110
V
GS
= −2.5 V, I
D
= −1.0 A 90 150
Forward Transconductance g
FS
V
DS
= −5.0 V, I
D
= −2.2 A 7.0 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= −15 V
720
pF
Output Capacitance C
oss
95
Reverse Transfer Capacitance C
rss
65
Total Gate Charge Q
G(TOT)
V
GS
= −10 V, V
DS
= −15 V,
I
D
= −3.5 A
15.6
nC
Threshold Gate Charge Q
G(TH)
0.7
Gate−to−Source Charge Q
GS
1.6
Gate−to−Drain Charge Q
GD
2.6
Total Gate Charge Q
G(TOT)
V
GS
= −4.5 V, V
DS
= −15 V,
I
D
= −3.5 A
7.4
nC
Threshold Gate Charge Q
G(TH)
0.7
Gate−to−Source Charge Q
GS
1.6
Gate−to−Drain Charge Q
GD
2.6
Gate Resistance R
G
6.1
W
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V (Note 4)
Turn−On Delay Time
t
d(on)
V
GS
= −10 V, V
DS
= −15 V,
I
D
= −3.5 A, R
G
= 6 W
8.0
ns
Rise Time t
r
11
Turn−Off Delay Time t
d(off)
32
Fall Time t
f
14
Turn−On Delay Time t
d(on)
V
GS
= −4.5 V, V
DS
= −15 V,
I
D
= −3.5 A, R
G
= 6 W
9.0
ns
Rise Time t
r
16
Turn−Off Delay Time t
d(off)
25
Fall Time t
f
22
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= −1.0 A, T
J
= 25°C −0.8 −1.2 V
Reverse Recovery Time t
RR
V
GS
= 0 V, I
S
= −1.0 A,
dI
SD
/d
t
= 100 A/ms
14
ns
Charge Time t
a
10
Discharge Time t
b
4.0
Reverse Recovery Charge Q
RR
8.0 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
NTR4171P
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) −V
GS
, GATE−TO−SOURCE VOLTAGE (V)
5.04.53.02.01.51.00.50
0
1.0
2.0
4.0
6.0
7.0
8.0
10
3.02.52.252.01.751.51.251.0
0
1.0
2.0
3.0
6.0
7.0
8.0
10
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−V
GS
, GATE VOLTAGE (V) −I
D
, DRAIN CURRENT (A)
9.08.06.05.04.03.02.01.0
0
0.05
0.10
0.15
0.20
0.25
0.30
9.07.06.04.03.02.01.00
0
0.05
0.10
0.15
0.20
0.25
0.30
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) −V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.6
0.7
0.8
0.9
1.0
1.3
1.4
1.6
30252015105.00
10
100
1000
10,000
−I
D
, DRAIN CURRENT (A)
−I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)R
DS(on)
, NORMALIZED DRAIN−TO−SOURCE RESISTANCE (W)
I
DSS
, LEAKAGE (nA)
2.5 4.03.5
3.0
5.0
9.0
V
GS
= −2.0 V
−2.2 V
−2.5 V
−10 V
−4.5 V
2.75
4.0
5.0
9.0
V
DS
= −5 V
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
7.0 10
T
J
= 25°C
I
D
= −2.2 A
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
5.0 8.0 10
T
J
= 25°C
V
GS
= −10 V
−2.2 V
−2.5 V
−4.5 V
−2.0 V
150
V
GS
= −4.5 V
I
D
= −2.2 A
1.1
1.2
1.5
T
J
= 125°C
T
J
= 150°C
P1-P3P4-P6

NTR4171PT1G

Mfr. #:
Buy NTR4171PT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET PFET SOT23 30V TR 0.075R
Lifecycle:
New from this manufacturer.
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