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DG9232DY-T1-E3

P1-P3P4-P6P7-P9P10-P11
Vishay Siliconix
DG9232, DG9233
Document Number: 70837
S11-0984–Rev. F, 23-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Low-Voltage Dual SPST Analog Switch
FEATURES
•
Low voltage operation (+ 2.7 V to + 5 V)
• Low on-resistance - R
DS
(on): 20
• Fast switching - t
ON
: 35 ns, t
OFF
: 20 ns
• Low leakage - I
COM(on)
: 200 pA max.
• Low charge injection - Q
INJ
: 1 pC
• Low power consumption
• TTL/CMOS compatible
• ESD protection > 2000 V (method 3015.7)
• Available in MSOP-8 and SOIC-8
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Battery operated systems
• Portable test equipment
• Sample and hold circuits
• Cellular phones
• Communication systems
• Military radio
• PBX, PABX guidance and control systems
DESCRIPTION
The DG9232, 9233 is a single-pole/single-throw monolithic
CMOS analog device designed for high performance
switching of analog signals. Combining low power, high
speed (t
ON
: 35 ns, t
OFF
: 20 ns), low on-resistance (R
DS(on)
:
20 ) and small physical size, the DG9232, 9233 is ideal for
portable and battery powered applications requiring high
performance and efficient use of board space.
The DG9232, 9233 is built on Vishay Siliconix’s low voltage
BCD-15 process. Minimum ESD protection, per method
3015.7 is 2000 V. An epitaxial layer prevents latchup.
Break-before -make is guaranteed for DG9232. 9233.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
BENEFITS
• Reduced power consumption
• Simple logic interface
• High accuracy
• Reduce board space
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic "0" 0.8 V
Logic "1" 2.4 V
Logic "0" 0.8 V
Logic "1" 2.4 V
* Pb containing terminations are not RoHS compliant, exemptions may apply
NC
1
V+
COM
1
IN
1
IN
2
COM
2
GND NC
2
1
2
3
4
8
7
6
5
Top View
NO
1
V+
COM
1
IN
1
IN
2
COM
2
GND NO
2
1
2
3
4
8
7
6
5
Top View
TRUTH TABLE - DG9232
Logic Switch
0 On
1Off
TRUTH TABLE - DG9233
Logic Switch
0 Off
1On
ORDERING INFORMATION
Temp Range Package Part Number
- 40 °C to 85 °C
SOIC-8
DG9232DY
DG9232DY-E3
DG9232DY-T1
DG9232DY-T1-E3
DG9233DY
DG9233DY-E3
DG9233DY-T1
DG9233DY-T1-E3
MSOP-8
DG9232DQ-T1-E3
DG9233DQ-T1-E3
www.vishay.com
2
Document Number: 70837
S11-0984–Rev. F, 23-May-11
Vishay Siliconix
DG9232, DG9233
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 70 °C.
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Difference of min and max values.
g. Guaranteed by 5 V leakage tests, not production tested.
ABSOLUTE MAXIMUM RATINGS
Parameter Limit Unit
Reference V+ to GND - 0.3 to + 13
V
IN, COM, NC, NO
a
- 0.3 to (V+ + 0.3)
Continuous Current (Any terminal) ± 20
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 40
ESD (Method 3015.7) > 2000 V
Storage Temperature D suffix - 65 to 125 °C
Power Dissipation (Packages)
b
8-pin narrow body SOIC
c
400 mW
SPECIFICATIONS (V+ = 3 V)
Parameter Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, V
IN
= 0.8 V or 2.4 V
e
Temp.
a
D Suffix
- 40 °C to 85 °C
Unit Min.
c
Typ.
b
Max.
c
Analog Switch
Analog Signal Range
d
V
ANALOG
Full 0 3 V
Drain-Source On-Resistance
R
DS(on)
V
NO
or V
NC
= 1.5 V, V+ = 2.7 V
I
COM
= 5 mA
Room
Full
30
50
80
R
DS(on)
Match
d
R
DS(on)
V
NO
or V
NC
= 1.5 V
Room 0.4 2
R
DS(on)
Flatness
d
R
DS(on)
Flatness
V
NO
or V
NC
= 1 and 2 V
Room 4 8
NO or NC Off Leakage Current
g
I
NO/NC(off)
V
NO
or V
NC
= 1 V/2 V, V
COM
= 2 V/1 V
Room
Full
- 100
- 5000
5
100
5000
pA
COM Off Leakage Current
g
I
COM(off)
V
COM
= 1 V/2 V, V
NO
or V
NC
= 2 V/1 V
Room
Full
- 100
- 5000
5
100
5000
Channel-On Leakage Current
g
I
COM(on)
V
COM
= V
NO
or V
NC
= 1 V/2 V
Room
Full
- 200
- 10000
10
200
10000
Digital Control
Input Current
I
INL
or I
INH
Full 1 µA
Dynamic Characteristics
Tur n- On Ti m e
t
ON
V
NO
or V
NC
= 1.5 V
Room
Full
50 120
200
ns
Tur n- O f f T i me
t
OFF
Room
Full
20 50
120
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
Room 1 5 pC
Off-Isolation OIRR
R
L
= 50 , C
L
= 5 pF, f = 1 MHz
Room - 74
dB
Crosstalk
X
TA LK
Room - 90
NC and NO Capacitance
C
S(off)
f = 1 MHz
Room 7
pFChannel-On Capacitance
C
COM(on)
Room 20
COM-Off Capacitance
C
COM(off)
Room 13
Power Supply
Positive Supply Range V+ 2.7 12 V
Power Supply Current I+
V+ = 3.3 V, V
IN
= 0 or 3.3 V
1µA
Document Number: 70837
S11-0984–Rev. F, 23-May-11
www.vishay.com
3
Vishay Siliconix
DG9232, DG9233
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Difference of min and max values.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 5 V)
Parameter Symbol
Test Conditions
Otherwise Unless Specified
V+ = 5 V, ± 10 %, V
IN
= 0.8 V or 2.4 V
e
Temp.
a
D Suffix
- 40 °C to 85°C
Unit Min.
c
Typ.
b
Max.
c
Analog Switch
Analog Signal Range
d
V
ANALOG
Full 0 5 V
Drain-Source On-Resistance
R
DS(on)
V
NO
or V
NC
= 3.5 V, V+ = 4.5 V
I
COM
= 5 mA
Room
Full
20
30
50
R
DS(on)
Match
d
R
DS(on)
V
NO
or V
NC
= 3.5 V
Room 0.4 2
R
DS(on)
Flatness
d
R
DS(on)
Flatness
V
NO
or V
NC
= 1, 2 and 3 V
Room 2 6
NO or NC Off Leakage Current
g
I
NO/NC(off)
V
NO
or V
NC
= 1 V/4 V, V
COM
= 4 V/1 V
Room
Full
- 100
- 5000
10
100
5000
pACOM Off Leakage Current
I
COM(off)
V
COM
= 1 V/4 V, V
NO
or V
NC
= 4 V/1 V
Room
Full
- 100
- 5000
10
100
5000
Channel-On Leakage Current
I
COM(on)
V
COM
= V
NO
or V
NC
= 1 V/4 V
Room
Full
- 200
- 10000
200
10000
Digital Control
Input Current
I
INL
or I
INH
Full 1 µA
Dynamic Characteristics
Tu r n - O n T i m e
t
ON
V
NO
or V
NC
= 3.0 V
Room
Full
35 75
150
ns
Turn-Off Time
t
OFF
Room
Full
20 50
100
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
Room 2 5 pC
Off-Isolation OIRR
R
L
= 50 , C
L
= 5 pF, f = 1 MHz
Room - 74
dB
Crosstalk
X
TA LK
Room - 90
NC and NO Capacitance
C
(off)
f = 1 MHz
Room 7
pFChannel-On Capacitance
C
D(on)
Room 20
COM-Off Capacitance
C
D(off)
Room 13
Power Supply
Positive Supply Range V+ 2.7 12 V
Power Supply Current I+
V+ = 5.5 V, V
IN
= 0 or 5.5 V
1µA
P1-P3P4-P6P7-P9P10-P11

DG9232DY-T1-E3

Mfr. #:
Buy DG9232DY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs RECOMMENDED ALT 78-DG9232EDY-T1-GE3
Lifecycle:
New from this manufacturer.
Delivery:
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