MPSA55RLRAG Datasheet MPSA56RLRMG, MPSA06RLG, MPSA56ZL1G | P1-P3

April, 2007 − Rev. 3

1 Publication Order Number:

MPSA05/D

NPN − MPSA05, MPSA06*;

PNP − MPSA55, MPSA56*

*Preferred Devices

Amplifier Transistors

Voltage and Current are Negative

for PNP Transistors

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MPSA05, MPSA55

MPSA06, MPSA56

V

CEO

60

80

Vdc

Collector−Base Voltage

MPSA05, MPSA55

MPSA06, MPSA56

V

CBO

60

80

Vdc

Emitter−Base Voltage V

EBO

4.0 Vdc

Collector Current − Continuous I

C

500 mAdc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

W

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

(Note 1)

R

q

JA

200 °C/W

Thermal Resistance, Junction−to−Case

R

q

JC

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. R

q

JA

is measured with the device soldered into a typical printed circuit board.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

http://onsemi.com

COLLECTOR

3

2

BASE

1

EMITTER

NPN

COLLECTOR

3

2

BASE

1

EMITTER

PNP

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

1

2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 1

MARKING DIAGRAM

MPS

Axx

AYWW G

G

xx = 05, 06, 55, or 56

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

NPN − MPSA05, MPSA06*; PNP − MPSA55, MPSA56*

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 2)

(I

C

= 1.0 mAdc, I

B

= 0) MPSA05, MPSA55

MPSA06, MPSA56

V

(BR)CEO

60

80

−

Vdc

Emitter−Base Breakdown Voltage

(I

E

= 100 mAdc, I

C

= 0)

V

(BR)EBO

4.0 − Vdc

Collector Cutoff Current

(V

CE

= 60 Vdc, I

B

= 0)

I

CES

− 0.1

mAdc

Collector Cutoff Current

(V

CB

= 60 Vdc, I

E

= 0) MPSA05, MPSA55

(V

CB

= 80 Vdc, I

E

= 0) MPSA06, MPSA56

I

CBO

−

0.1

mAdc

ON CHARACTERISTICS

DC Current Gain

(I

C

= 10 mAdc, V

CE

= 1.0 Vdc)

(I

C

= 100 mAdc, V

CE

= 1.0 Vdc)

h

FE

100

−

Collector−Emitter Saturation Voltage

(I

C

= 100 mAdc, I

B

= 10 mAdc)

V

CE(sat)

− 0.25 Vdc

Base−Emitter On Voltage

(I

C

= 100 mAdc, V

CE

= 1.0 Vdc)

V

BE(on)

− 1.2 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 3)

(I

C

= 10 mA, V

CE

= 2.0 V, f = 100 MHz) MPSA05

MPSA06

(I

C

= 100 mAdc, V

CE

= 1.0 Vdc, f = 100 MHz) MPSA55

MPSA56

f

T

100

50

−

MHz

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

3. f

T

is defined as the frequency at which |h

fe

| extrapolates to unity.

Figure 1. Switching Time Test Circuits

OUTPUT

TURN−ON TIME

−1.0 V

V

CC

+40 V

R

L

* C

S

t 6.0 pF

R

B

100

V

in

5.0 mF

t

r

= 3.0 ns

0

+10 V

5.0 ms

OUTPUT

TURN−OFF TIME

+V

BB

V

CC

+40 V

R

L

* C

S

t 6.0 pF

R

B

100

V

in

5.0 mF

t

r

= 3.0 ns

5.0 ms

*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities

NPN − MPSA05, MPSA06*; PNP − MPSA55, MPSA56*

http://onsemi.com

3

Figure 2. MPSA05/06 Current−Gain —

Bandwidth Product

Figure 3. MPSA55/56 Current−Gain —

Bandwidth Product

Figure 4. MPSA05/06 Capacitance Figure 5. MPSA55/56 Capacitance

Figure 6. MPSA05/06 Switching Time Figure 7. MPSA55/56 Switching Time

100 2002.0

I

C

, COLLECTOR CURRENT (mA)

300

200

100

70

50

30

I

C

, COLLECTOR CURRENT (mA)

−100 −200−10

200

100

70

50

20

10 1000.1

V

R

, REVERSE VOLTAGE (VOLTS)

80

60

40

20

10

8.0

V

R

, REVERSE VOLTAGE (VOLTS)

−1.0 −100−0.1

100

70

50

30

20

10

−2.020

V

CE

= 2.0 V

T

J

= 25°C

V

CE

= −2.0 V

T

J

= 25°C

T

J

= 25°C

f

T

, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

NPN PNP

C, CAPACITANCE (pF)

3.0 5.0 7.0 10 20 30 50 70 −2.0 −3.0 −5.0 −7.0 −20 −30 −50 −70

30

f

T

, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

501.0 2.0 5.00.2 0.5

6.0

4.0

C

ibo

C

obo

7.0

5.0

−0.2 −0.5 −5.0 −10 −20 −50

T

J

= 25°C

C

ibo

C

obo

2010

I

C

, COLLECTOR CURRENT (mA)

200

100

50

20

10

I

C

, COLLECTOR CURRENT (mA)

−10−5.0

500

200

100

50

20

10

−100100

t, TIME (ns)

50

200 500

1.0 k

500

V

CC

= 40 V

I

C

/I

B

= 10

I

B1

= I

B2

T

J

= 25°C

t

s

t

f

t

r

−50 −200 −500

1.0 k

5.0 7.0

30

70

300

700

30 70

t

d

@ V

BE(off)

= 0.5 V

300

700

70

30

−7.0 −300−70−20 −30

V

CC

= −40 V

I

C

/I

B

= 10

I

B1

= I

B2

T

J

= 25°C

t

s

t

f

t

r

t

d

@ V

BE(off)

= −0.5 V

C, CAPACITANCE (pF)

300

MPSA55RLRAG

MPSA55RLRAG

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