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PMEM4020PD,115

P1-P3P4-P6P7-P9P10-P11
2003 Nov 24 4
NXP Semiconductors Product data sheet
PNP transistor/Schottky-diode module PMEM4020PD
THERMAL CHARACTERISTICS
Notes
1. For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses P
R
and
I
F
(AV) rating will be available on request.
2. Solder point of collector or cathode tab.
3. Device mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint.
4. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector and
cathode both 1 cm
2
.
5. Device mounted on a FR4 printed-circuit board, single-sided copper; tinplated; standard footprint for SOT457.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Single device
R
th(j-s)
thermal resistance from junction to
solder point
in free air; notes 1 and 2 95 K/W
R
th(j-a)
thermal resistance from junction to
ambient
in free air; notes 1 and 3 250 K/W
in free air; notes 1 and 4 315 K/W
in free air; notes 1 and 5 425 K/W
Combined device
R
th(j-a)
thermal resistance from junction to
ambient
in free air; notes 1 and 3 208 K/W
2003 Nov 24 5
NXP Semiconductors Product data sheet
PNP transistor/Schottky-diode module PMEM4020PD
ELECTRICAL CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
PNP transistor
I
CBO
collector-base cut-off current V
CB
= −40 V; I
E
= 0 − − −100 nA
V
CB
= −40 V; I
E
= 0; T
amb
= 150 °C − − −50 µA
I
CEO
collector-emitter cut-off current V
CE
= −30 V; I
B
= 0 − − −100 nA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 − − −100 nA
h
FE
current gain (DC) V
CE
= −5 V; I
C
= −1 mA 300 − −
V
CE
= −5 V; I
C
= −100 mA 300 − 800
V
CE
= −5 V; I
C
= −500 mA 250 − −
V
CE
= −5 V; I
C
= −1 A 160 − −
V
CE
= −5 V; I
C
= −2 A; note 1 50 − −
V
CEsat
collector-emitter saturation voltage I
C
= −100 mA; I
B
= −1 mA − − −120 mV
I
C
= −500 mA; I
B
= −50 mA − − −145 mV
I
C
= −1 A; I
B
= −100 mA − − −260 mV
I
C
= −2 A; I
B
= −200 mA − − −530 mV
V
BEsat
base-emitter saturation voltage I
C
= −1 A; I
B
= −50 mA − − −1.1 V
R
CEsat
equivalent on-resistance I
C
= −1 A; I
B
= −100 mA; note 1 − 180 280 mΩ
V
BEon
base-emitter turn-on voltage V
CE
= −5 V; I
C
= −1 A − − −1 V
f
T
transition frequency I
C
= −50 mA; V
CE
= −10 V;
f
= 100 MHz
150 − − MHz
Schottky barrier diode
V
F
continuous forward voltage see Fig.2; note 1
I
F
= 10 mA − 240 270 mV
I
F
= 100 mA − 300 350 mV
I
F
= 1 000 mA − 480 550 mV
I
R
reverse current see Fig.3; note 1
V
R
= 5 V − 5 10 µA
V
R
= 8 V − 7 20 µA
V
R
= 15 V − 10 50 µA
C
d
diode capacitance V
R
= 5 V; f = 1 MHz; see Fig.4 − 19 25 pF
2003 Nov 24 6
NXP Semiconductors Product data sheet
PNP transistor/Schottky-diode module PMEM4020PD
GRAPHICAL DATA
handbook, halfpage
5000
(1) (3)
V
F
(mV)
I
F
(mA)
100 200 300 400
10
10
2
10
3
1
MLE230
(2)
Fig.2 Forward current as a function of forward
voltage; typical values.
Schottky barrier diode.
(1) T
amb
= 125 °C.
(2) T
amb
= 85 °C.
(3) T
amb
= 25 °C.
handbook, halfpage
250 51015
I
R
(µA)
20
V
R
(V)
10
5
10
4
10
3
10
2
10
1
MHC312
(1)
(2)
(3)
Fig.3 Reverse current as a function of reverse
voltage; typical values.
Schottky barrier diode.
(1) T
amb
= 125 °C.
(2) T
amb
= 85 °C.
(3) T
amb
= 25 °C.
handbook, halfpage
05
C
d
(pF)
10 20
80
60
20
0
40
15
V
R
(V)
MHC313
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
Schottky barrier diode; f = 1 MHz; T
amb
= 25 °C.
handbook, halfpage
0
1200
200
400
600
800
1000
MHC088
−10
−1
h
FE
−10−1
I
C
(mA)
−10
2
−10
3
−10
4
(1)
(2)
(3)
Fig.5 DC current gain as a function of collector
current; typical values.
PNP transistor; V
CE
= −5 V.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
P1-P3P4-P6P7-P9P10-P11

PMEM4020PD,115

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Buy PMEM4020PD,115
Manufacturer:
NXP Semiconductors
Description:
TRANS PNP 40V 0.75A 6TSOP
Lifecycle:
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