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BZD17C11P-E3-18

P1-P3P4-P5
BZD17C3V6P to BZD17C200P
Document Number 81821
Rev. 1.0, 09-Jun-09
Vishay Semiconductors
www.vishay.com
1
For technical support, please contact: Diodes-SSP@vishay.com
Zener Diodes
Features
• Sillicon planar zener diodes
• Low profile surface-mount package
• Low leakage current
• Excellent stability
• High temperature soldering: 260 °C/10 s
at terminals
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: JEDEC DO219AB (SMF
®
) plastic case
Weight: approx. 15 mg
Packaging codes/options:
GS18/10K per 13" reel, (8 mm tape), 50K/box
GS08/3K per 7" reel, (8 mm tape), 30K/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Notes:
1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
2)
T
j
= 25 °C prior to surge
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Notes:
1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick)
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
17249
Parameter Te s t c o n d i t i o n Symbol Value Unit
Power dissipation
T
L
= 80 °C P
tot
2.3 W
T
A
= 25 °C P
tot
0.8
1)
W
Non-repetitive peak pulse power
dissipation
100 µs square pulse
2)
P
ZSM
300 W
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air
1)
R
thJA
180 K/W
Thermal resistance junction to lead R
thJL
30 K/W
Maximum junction temperature T
j
150 °C
Storage temperature range T
stg
- 55 to + 150 °C
Parameter Test condition Symbol Min. Ty p. Max. Unit
Forward voltage
I
F
= 0.2 A V
F
1.2 V
www.vishay.com
2
Document Number 81821
Rev. 1.0, 09-Jun-09
BZD17C3V6P to BZD17C200P
Vishay Semiconductors
For technical support, please contact: Diodes-SSP@vishay.com
Electrical Characteristics
T
J
= 25 °C, unless otherwise specified
Note:
1)
Pulse test: t
p
≤ 5 ms
Part number Marking code
Working voltage
1)
Differential
resistance
Temperature
coefficient
Te s t
current
Reverse leakage
current
V
Z
at I
ZT
r
dif
at I
Z
α
Z
at I
Z
I
ZT
I
R
V
R
V Ω %/°C mA µA V
min. max. typ. max. min. max. max.
BZD17C3V6P I0 3.4 3.8 4 8 - 0.14 - 0.04 100 100 1
BZD17C3V9P I1 3.7 4.1 4 8 - 0.14 - 0.04 100 50 1
BZD17C4V3P I2 4 4.6 4 7 - 0.12 - 0.02 100 25 1
BZD17C4V7P I3 4.4 5 3 7 - 0.1 0 100 10 1
BZD17C5V1P I4 4.8 5.4 3 6 - 0.08 0.02 100 5 1
BZD17C5V6P I5 5.2 6 2 4 - 0.04 0.04 100 10 2
BZD17C6V2P I6 5.8 6.6 2 3 - 0.01 0.06 100 5 2
BZD17C6V8P I7 6.4 7.2 1 3 0 0.07 100 10 3
BZD17C7V5P I8 7 7.9 1 2 0 0.07 100 50 3
BZD17C8V2P I9 7.7 8.7 1 2 0.03 0.08 100 10 3
BZD17C9V1P J0 8.5 9.6 2 4 0.03 0.08 50 10 5
BZD17C10P J1 9.4 10.6 2 4 0.05 0.09 50 7 7.5
BZD17C11P J2 10.4 11.6 4 7 0.05 0.1 50 4 8.2
BZD17C12P J3 11.4 12.7 4 7 0.05 0.1 50 3 9.1
BZD17C13P J4 12.4 14.1 5 10 0.05 0.1 50 2 10
BZD17C15P J5 13.8 15.6 5 10 0.05 0.1 50 1 11
BZD17C16P J6 15.3 17.1 6 15 0.06 0.11 25 1 12
BZD17C18P J7 16.8 19.1 6 15 0.06 0.11 25 1 13
BZD17C20P J8 18.8 21.2 6 15 0.06 0.11 25 1 15
BZD17C22P J9 20.8 23.3 6 15 0.06 0.11 25 1 16
BZD17C24P K0 22.8 25.6 7 15 0.06 0.11 25 1 18
BZD17C27P K1 25.1 28.9 7 15 0.06 0.11 25 1 20
BZD17C30P K2 28 32 8 15 0.06 0.11 25 1 22
BZD17C33P K3 31 35 8 15 0.06 0.11 25 1 24
BZD17C36P K4 34 38 21 40 0.06 0.11 10 1 27
BZD17C39P K5 37 41 21 40 0.06 0.11 10 1 30
BZD17C43P K6 40 46 24 45 0.07 0.12 10 1 33
BZD17C47P K7 44 50 24 45 0.07 0.12 10 1 36
BZD17C51P K8 48 54 25 60 0.07 0.12 10 1 39
BZD17C56P K9 52 60 25 60 0.07 0.12 10 1 43
BZD17C62P L0 58 66 25 80 0.08 0.13 10 1 47
BZD17C68P L1 64 72 25 80 0.08 0.13 10 1 51
BZD17C75P L2 70 79 30 100 0.08 0.13 10 1 56
BZD17C82P L3 77 87 30 100 0.08 0.13 10 1 62
BZD17C91P L4 85 96 60 200 0.08 0.13 5 1 68
BZD17C100P L5 94 106 60 200 0.09 0.13 5 1 75
BZD17C110P L6 104 116 80 250 0.09 0.13 5 1 82
BZD17C120P L7 114 127 80 250 0.09 0.13 5 1 91
BZD17C130P L8 124 141 110 300 0.09 0.13 5 1 100
BZD17C150P L9 138 156 130 300 0.09 0.13 5 1 110
BZD17C160P M0 153 171 150 350 0.09 0.13 5 1 120
BZD17C180P M1 168 191 180 400 0.09 0.13 5 1 130
BZD17C200P M2 188 212 200 500 0.09 0.13 5 1 150
BZD17C3V6P to BZD17C200P
Document Number 81821
Rev. 1.0, 09-Jun-09
Vishay Semiconductors
www.vishay.com
3
For technical support, please contact: Diodes-SSP@vishay.com
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Typ. Diode Capacitance vs. Reverse Voltage
Figure 3. Power Dissipation vs. Ambient Temperature
0.1
1
10
0.6 0.8 1.0 1.2 1.4 1.6
17411
I
F
- Forward Current (A)
V
F
- Forward Voltage (V)
Max. V
F
Ty p. V
F
10
100
1000
10 000
0 0.5 1.0 1.5 2.0 2.5 3.0
17412
C
D
- Typ. Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
C5V1P
C6V8P
C12P
C27P
C51P
C200P
C18P
0
1.0
0.5
1.5
2.5
2.0
3.0
0 25 50 75 100 125 150
17413
P
tot
- Power Dissipation (W)
T
amb
- Ambient Temperature (°C)
Ambient temperature
Tie point temperature
P1-P3P4-P5

BZD17C11P-E3-18

Mfr. #:
Buy BZD17C11P-E3-18
Manufacturer:
Vishay Semiconductors
Description:
Zener Diodes ZENER DIODE SMF DO219 ECO-E3
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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