IXTP2N100 Datasheet IXTP2N100, IXTA2N100 | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 1000 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 1000 V

V

GSS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25°C2A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

8A

I

A

T

C

= 25°C2A

E

AS

T

C

= 25°C 150 mJ

dV/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

, T

J

≤ 150°C 5 V/ns

P

D

T

C

= 25°C 100 W

T

J

- 55 ... +150 °C

T

JM

150 °C

T

stg

- 55 ... +150 °C

T

L

1.6mm (0.062) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

DS97540B(04/09)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 250μA 1000 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250μA 2.0 4.5 V

I

GSS

V

GS

= ±20V, V

DS

= 0V ±100 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 25 μA

T

J

= 125°C 100 μΑ

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 7 Ω

High Voltage

MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTA2N100

IXTP2N100

V

DSS

= 1000V

I

D25

= 2A

R

DS(on)

≤≤

≤ 7

ΩΩ

Ω

Features

z

International Standard Packages

z

Avalanche Rated

z

Low Package Inductance (< 5nH)

z

Fast Switching Times

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

Switched-Mode and Resonant-Mode

Power Supplies

z

FlyBack Inverters

z

DC Choppers

G = Gate D = Drain

S = Source TAB = Drain

TO-263 (IXTA)

TO-220 (IXTP)

D

(TAB)

G

S

G

S

(TAB)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA2N100

IXTP2N100

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 0.5 • I

D25

, Note 1 1.5 2.5 S

C

iss

825 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 58 pF

C

rss

15 pF

t

d(on)

20 ns

t

r

23 ns

t

d(off)

34 ns

t

f

21 ns

Q

g(on)

18.0 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

3.7 nC

Q

gd

8.2 nC

R

thJC

1.25 °C/W

R

thCS

(TO-220) 0.50 °C/W

Note 1: Pulse Test, t ≤ 300 μs; Duty Cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Pins: 1 - Gate 2 - Drain

TO-220 (IXTP) Outline

TO-263 (IXTA) Outline

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 20Ω (External)

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 2 A

I

SM

Repetitive, pulse width limited by T

JM

8 A

V

SD

I

F

= 2A, V

GS

= 0V, Note 1 1.5 V

t

rr

800 ns

I

F

= 2A, -di/dt = 100A/μs, V

R

= 100V

IXTA2N100

IXTP2N100

Fig. 1. Output Characteristics

@ 25ºC

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0123456789101112

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5

V

6

V

Fig. 2. Extended Output Characteristics

@ 25ºC

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6

V

5

V

Fig. 3. Output Characteristics

@ 125ºC

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0 2 4 6 8 1012141618202224

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

6V

5

V

Fig. 4. R

DS(on)

Normalized to I

D

= 1A Value

vs. Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 2A

I

D

= 1A

Fig. 5. R

DS(on)

Normalized to I

D

= 1A Value

vs. Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXTP2N100

IXTP2N100

Products related to this Datasheet