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VS-10BQ015HM3/5BT

P1-P3P4-P6P7-P7
VS-10BQ015HM3
www.vishay.com
Vishay Semiconductors
Revision: 10-Mar-16
1
Document Number: 95722
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 1.0 A
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• 125 °C T
J
operation (V
R
< 5 V)
• Optimized for OR-ing applications
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Meets JESD 201 class 2 whisker test
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-10BQ015HM3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
PRODUCT SUMMARY
Package SMB
I
F(AV)
1.0 A
V
R
15 V
V
F
at I
F
0.21 V
I
RM
35 mA at 100 °C
T
J
max. 125 °C
Diode variation Single die
E
AS
1.0 mJ
Cathode Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 1.0 A
V
RRM
15 V
I
FSM
t
p
= 5 μs sine 140 A
V
F
1.0 A
pk
, T
J
= 125 °C 0.21 V
T
J
Range -55 to +125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10BQ015HM3 UNITS
Maximum DC reverse voltage V
R
15
V
Maximum working peak reverse voltage V
RWM
25
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
L
= 134 °C, rectangular waveform 1.0 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
140
A
10 ms sine or 6 ms rect. pulse 40
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 2 mH 1.0 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.0 A
VS-10BQ015HM3
www.vishay.com
Vishay Semiconductors
Revision: 10-Mar-16
2
Document Number: 95722
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width = 300 μs, duty cycle = 2 %
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(2)
Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
1 A
T
J
= 25 °C
0.33
V
2 A 0.39
1 A
T
J
= 125 °C
0.21
2 A 0.29
Maximum reverse leakage current
See fig. 2
I
RM
T
J
= 25 °C
V
R
= Rated V
R
0.5
mA
T
J
= 100 °C 35
Threshold voltage V
F(TO)
T
J
= T
J
maximum
-V
Forward slope resistance r
t
-m
Typical junction capacitance C
T
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz), 25 °C 390 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
(1)
-55 to +125
°C
Maximum storage temperature range T
Stg
-55 to +150
Maximum thermal resistance,
junction to lead
R
thJL
(2)
DC operation
See fig. 4
36
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation 80
Approximate weight
0.10 g
0.003 oz.
Marking device Case style SMB (similar to DO-214AA) 1C
dP
tot
dT
J
-------------
1
R
thJA
--------------<
VS-10BQ015HM3
www.vishay.com
Vishay Semiconductors
Revision: 10-Mar-16
3
Document Number: 95722
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
V
FM
-
Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0.1
1
10
Tj = 25°C
T
J
= 100 °C
T
J
= 125 °C
T
J
= 75 °C
V
R
-
Reverse Voltage (V)
I
R
- Reverse Current (mA)
0 3 6 9 12 15
0.01
0.1
1
10
100
25 °C
100 °C
75 °C
50 °C
1000
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
0
10
15312
69
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
100
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P7

VS-10BQ015HM3/5BT

Mfr. #:
Buy VS-10BQ015HM3/5BT
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - SMB-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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