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MCT62H

P1-P3P4-P6P7-P7
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83525
560 Rev. 1.6, 10-Dec-08
MCT6H, MCT62H
Vishay Semiconductors
Optocoupler, Phototransistor Output, Dual Channel
DESCRIPTION
The MCT6H and MCT62H consist of a phototransistor
optically coupled to a gallium arsenide infrared emitting
diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe, providing a
fixed distance between input and output for highest safety
requirements.
FEATURES
• Current transfer ratio (CTR) of typical 100 %
• Isolation test voltage V
ISO
= 5300 V
RMS
• Low temperature coefficient of CTR
• Low coupling capacitance of typical 0.3 pF
• Wide ambient temperature range
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
APPLICATIONS
• Galvanically separated circuits
• Non-interacting switches
AGENCY APPROVALS
• UL1577, file no. E76222 system code U, double protection
Note
MCT6H and MCT62H are marked as MCT6 and MCT62 respectively.
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to wave profile for soldering conditions for through hole devices.
8
76
5
12
3
4
17202
C
ORDER INFORMATION
PART REMARKS
MCT6H CTR > 50 %, DIP-8
MCT62H CTR > 100 %, DIP-8
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
Forward current I
F
60 mA
Forward surge current t
p
≤ 10 µs I
FSM
1.5 A
Power dissipation P
diss
100 mW
Junction temperature T
j
125 °C
OUTPUT
Collector emitter voltage V
CEO
70 V
Emitter collector voltage V
ECO
7V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
≤ 10 ms I
CM
100 mA
Power dissipation P
diss
150 mW
Junction temperature T
j
125 °C
COUPLER
AC isolation test voltage (RMS) t = 1.0 min V
ISO
5000 V
RMS
Total power dissipation P
tot
250 mW
Ambient temperature range T
amb
- 55 to + 100 °C
Storage temperature range T
stg
- 55 to + 125 °C
Soldering temperature
(2)
2 mm from case, t ≤ 10 s T
sld
260 °C
Document Number: 83525 For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
Rev. 1.6, 10-Dec-08 561
MCT6H, MCT62H
Optocoupler, Phototransistor
Output, Dual Channel
Vishay Semiconductors
Note
(1)
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ELECTRICAL CHARACTERISTICS
(1)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 50 mA V
F
1.25 1.6 V
OUTPUT
Collector emitter voltage I
C
= 1 mA V
CEO
70 V
Emitter collector voltage I
E
= 100 µA V
ECO
7V
Collector dark current V
CE
= 20 V, I
F
= 0, E = 0 I
CEO
100 nA
COUPLER
DC isolation test voltage t = 2 s V
ISO
5000 V
RMS
Isolation resistance
V
IO
= 1000 V,
40 % relative humidity
R
IO
10
12
Ω
Collector emitter saturation
voltage
I
F
= 10 mA, I
C
= 1 mA V
CEsat
0.3 V
Cut off frequency
I
F
= 10 mA, V
CE
= 5 V,
R
L
= 100 Ω
f
C
100 kHz
Coupling capacitance f = 1 MHz C
k
0.3 pF
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
V
CE
= 5 V, I
F
= 5 mA MCT6H CTR 50 100 %
V
CE
= 5 V, I
F
= 10 mA MCT6H CTR 60 120 %
V
CE
= 5 V, I
F
= 5 mA MCT62H CTR 100 200 %
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Delay time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω
(see figure 1)
t
d
3µs
Rise time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω
(see figure 1)
t
r
3µs
Fall time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω
(see figure 1)
t
f
4.7 µs
Storage time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω
(see figure 1)
t
s
0.3 µs
Turn-on time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω
(see figure 1)
t
on
6µs
Turn-off time
V
S
= 5 V, I
C
= 2 mA, R
L
= 100 Ω
(see figure 1)
t
off
5µs
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83525
562 Rev. 1.6, 10-Dec-08
MCT6H, MCT62H
Vishay Semiconductors
Optocoupler, Phototransistor
Output, Dual Channel
Fig. 1 - Test Circuit, non Saturated Operation Fig. 2 - Switching Times
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
Fig. 3 - Total Power Dissipation vs. Ambient Temperature
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Relative Current Transfer Ratio vs. Ambient Temperature
Fig. 6 - Collector Dark Current vs. Ambient Temperature
Channel I
Channel II
95 10804
R
G
= 50 Ω
t
p
t
p
= 50 µs
T
= 0.01
+ 5 V
I
F
0
50 Ω 100 Ω
I
F
I
C
= 2 mA; adjusted through
input amplitude
Oscilloscope
R
L
= 1 MΩ
C
L
= 20 pF
t
p
t
t
0
0
10 %
90 %
100 %
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
t
p
Pulse duration
t
d
Delay time
t
r
Rise time
t
on
(= t
d
+ t
r
) Turn-on time
t
s
Storage time
t
f
Fall time
t
off
(= t
s
+ t
f
)Turn-off time
96 11698
0
50
100
150
200
250
300
04080 120
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
96 11700
Coupled device
Phototransistor
IR-diode
0.1
1
10
100
1000
0
V
F
- Forward Voltage (V)
96 11862
I
F
- Forward Current (mA)
1.6
0.2
1.4
1.2
1.0
0.80.6
0.4
2.0
1.8
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 30 - 20 - 10 0 10 20 30 40 50 60 70 80
T
amb
- Ambient Temperature (°C)
96 11927
CTR
rel
- Relative Current Transfer Ratio
V
CE
= 5 V
I
F
= 5 mA
1
10
100
1000
10 000
0 10 20 30 40 50 60 70 80 90 100
T
amb
- Ambient Temperature (°C)
96 11928
V
CE
= 20 V
I
F
= 0 A
I
CEO
- Collector Dark Current,
with Open Base (nA)
P1-P3P4-P6P7-P7

MCT62H

Mfr. #:
Buy MCT62H
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Dual CTR >50%
Lifecycle:
New from this manufacturer.
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