BGU7052 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 21 February 2012 3 of 13
NXP Semiconductors
BGU7052
SiGe:C Low Noise High Linearity Amplifier
4. Limiting values
5. Thermal characteristics
6. Characteristics
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0 5 V
P
tot
total power dissipation - 300 mW
P
i(RF)CW
continuous waveform
RF input power
V
CC
=3.3V - 20 dBm
T
stg
storage temperature 65 +150 C
T
j
junction temperature - 150 C
T
amb
ambient temperature 40 +85 C
V
ESD
electrostatic discharge
voltage
Human Body Model (HBM);
According JEDEC standard 22-A114E
-4 kV
Charged Device Model (CDM);
According JEDEC standard 22-C101B
-2 kV
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point 20 K/W
Table 6. Characteristics
V
CC
= 3.3 V; T
amb
=25
C; input and output 50
; unless otherwise specified. All RF parameters are
measured at the device RF in and RF output terminals.
Symbol Parameter Conditions Min Typ Max Unit
I
CC
supply current 63 80 95 mA
G
ass
associated gain f = 1750 MHz - 21.5 - dB
f = 1900 MHz 18.5 20 21.5 dB
f = 1950 MHz - 19.7 - dB
NF noise figure f = 1750 MHz - 0.76 - dB
f = 1900 MHz - 0.76 0.95 dB
f = 1950 MHz - 0.79 - dB
P
L(1dB)
output power at 1 dB gain compression f = 1750 MHz - 15.5 - dBm
f = 1900 MHz 13 14.5 - dBm
f = 1950 MHz - 14.5 - dBm
IP3
O
output third-order intercept point f = 1750 MHz - 36.8 - dBm
f = 1900 MHz 32 35.3 - dBm
f = 1950 MHz - 35.1 - dBm
