Characteristics STPS40SM100C
2/9 Doc ID 15525 Rev 2
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.580 x I
F(AV)
+ 0.0043 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100 V
I
F(RMS)
Forward current rms 60 A
I
F(AV)
Average forward current δ = 0.5
T
c
= 130 °C Per diode 20
A
T
c
= 125 °C Per device 40
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 530 A
P
ARM
(1)
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 18000 W
V
ARM
(2)
Maximum repetitive peak avalanche voltage
t
p
< 1 µs T
j
< 150 °C
I
AR
< 45 A
120 V
V
ASM
(2)
Maximum single pulse peak avalanche voltage
t
p
< 1 µs T
j
< 150 °C
I
AR
< 45 A
120 V
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(3)
150 °C
1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 11.
3. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j a–()
--------------------------
<
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode
To ta l
1.3
0.7
°C/W
R
th(c)
Coupling 0.1
Table 4. Static electrical characteristics (per diode, at 25 °C unless otherwise specified)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= 70 V
7µA
T
j
= 125 °C 7 mA
T
j
= 25 °C
V
R
= 100 V
13 45 µA
T
j
= 125 °C 13 45 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 5 A
520
mV
T
j
= 125 °C 435
T
j
= 25 °C
I
F
= 10A
620 700
T
j
= 125 °C 520 580
T
j
= 25 °C
I
F
= 20 A
740 810
T
j
= 125 °C 605 665
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
