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NVMFS4C03NWFT3G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 2
1 Publication Order Number:
NVMFS4C03N/D
NVMFS4C03N
Power MOSFET
30 V, 1.7 mW, 159 A, Single N−Channel
Logic Level, SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
DS(on)
to Minimize Conduction Losses
• Low Q
G
and Capacitance to Minimize Driver Losses
• NVMFS4C03NWF − Wettable Flanks Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
"20 V
Continuous Drain Cur-
rent R
q
JC
(Notes 1, 2,
3)
Steady
State
T
C
= 25°C I
D
159 A
Power Dissipation
R
q
JC
(Notes 1, 2)
T
C
= 25°C P
D
77 W
Continuous Drain Cur-
rent R
q
JA
(Notes 1, 2,
3)
Steady
State
T
A
= 25°C I
D
34.9 A
Power Dissipation
R
q
JA
(Notes 1, 2)
T
A
= 25°C P
D
3.71 W
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
900 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
175
°C
Source Current (Body Diode) I
S
64 A
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 11 A)
E
AS
549 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Note 2)
R
q
JC
1.95
°C/W
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
40
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
www.onsemi.com
4C03xx
AYWZZ
1
V
(BR)DSS
R
DS(on)
MAX I
D
MAX
30 V
1.7 mW @ 10 V
159 A
2.4 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
S
S
S
G
D
D
D
D
Device Package Shipping
†
ORDERING INFORMATION
NVMFS4C03NT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Ree
l
NVMFS4C03NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
NVMFS4C03NWFT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Ree
l
NVMFS4C03NWFT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Ree
l
4C03N = Specific Device Code for
NVMFS4C03N
4C03WF= Specific Device Code of
NVMFS4C03NWF
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
NVMFS4C03N
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
18.2
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25 °C 1
mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= 20 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.3 2.2 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
4.8 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V I
D
= 30 A 1.4 1.7
mW
V
GS
= 4.5 V I
D
= 30 A 2.0 2.4
Forward Transconductance g
FS
V
DS
= 3 V, I
D
= 30 A 136 S
Gate Resistance R
G
T
A
= 25 °C 1.0
W
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
3071
pF
Output Capacitance C
OSS
1673
Reverse Transfer Capacitance C
RSS
67
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
20.8
nC
Threshold Gate Charge Q
G(TH)
4.9
Gate−to−Source Charge Q
GS
8.5
Gate−to−Drain Charge Q
GD
4.7
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 30 A
45.2
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 15 A,
R
G
= 3.0 W
14
ns
Rise Time t
r
32
Turn−Off Delay Time t
d(OFF)
27
Fall Time t
f
17
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C 0.75 1.1
V
T
J
= 125°C 0.6
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 30 A
47
ns
Charge Time t
a
23
Discharge Time t
b
24
Reverse Recovery Charge Q
RR
39 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
NVMFS4C03N
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. V
GS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
15012510075250
30252015105
10
100
1000
10000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
V
GS
= 10 V
3.4 V
3.2 V
3.0 V
2.8 V
T
J
= 25°C
T
J
= 25°C
T
J
= 150°C
T
J
= −55°C
I
D
= 30 A
V
GS
= 4.5 V
T
J
= 25°C
V
GS
= 10 V
50
I
D
= 30 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 85°C
T
J
= 125°C
T
J
= 100°C
3.8 V
1.8
3.6 V
2.6 V
T
J
= 25°C
1.6
1.4
1.2
1.0
0.8
0.6
−25−50
175
1.3
1.7
1.9
2.1
2.3
2.5
2.7
2.9
3.1
345678910
0
25
50
75
100
125
150
175
200
225
250
0.0 0.5 1.0 1.5 2.0 2.5 3.0
4.5 V
0
25
50
75
100
125
150
175
200
225
250
1.5 2 2.5 3 3.5 4 4.5
0 25 50 75 100 125 150 175 200 225 250
0
V
DS
= 3 V
1.5
1.3
1.7
1.9
2.1
2.3
2.5
2.7
2.9
3.1
1.5
P1-P3P4-P6

NVMFS4C03NWFT3G

Mfr. #:
Buy NVMFS4C03NWFT3G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SO8FL 30V 138A 2.1MO
Lifecycle:
New from this manufacturer.
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