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STL100NH3LL

P1-P3P4-P6P7-P9P10-P12
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Electrical characteristics STL100NH3LL
4/12
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250 µA, V
GS
= 0
30 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating @125 °C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±16 V
±100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
12.5V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 12.5 A
V
GS
= 4.5 V, I
D
= 12.5 A
0.0032
0.004
0.0035
0.005
Ω
Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward transconductance
V
DS
=10 V, I
D
= 12.5 A
30 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25 V, f=1 MHz,
V
GS
=0
4450
655
50
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=15 V, I
D
= 25 A
V
GS
=4.5 V
(see Figure 8)
30
12.5
10
40 nC
nC
nC
R
G
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
12 3 Ω
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STL100NH3LL Electrical characteristics
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Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
=15 V, I
D
= 12.5 A,
R
G
=4.7 Ω, V
GS
=10 V
(see Figure 14)
18
50
75
8
ns
ns
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current 25 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 100 A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
I
SD
=25 A, V
GS
=0
1.3 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=25 A,
di/dt = 100 A/µs,
V
DD
=25 V, Tj=150 °C
32
34
2.1
ns
nC
A
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Electrical characteristics STL100NH3LL
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2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
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P1-P3P4-P6P7-P9P10-P12

STL100NH3LL

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Buy STL100NH3LL
Manufacturer:
STMicroelectronics
Description:
MOSFET STRIPFET III
Lifecycle:
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